WAFFLE MOS CHANNEL W/L CALCULATION WITH SCHWARZ-CHRISTOFFEL TRANSFORMATION

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00212062" target="_blank" >RIV/68407700:21230/13:00212062 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
WAFFLE MOS CHANNEL W/L CALCULATION WITH SCHWARZ-CHRISTOFFEL TRANSFORMATION
Original language description
The main goal of this work is to describe alternative way of effective channel width to length (W/L) ratio calculation for Waffle MOS structure. Due to non-conventional gate geometry of the Waffle MOS transistor compare to the fingers structure, the channel W/L ratio calculation is not trivial and conformal mapping can be used. In terms of mapping the Schwarz-Christoffel Transformation is proposed. The optimal element shape of the Waffle MOS is proposed, to be easy solved by SC conformal mapping. Because result of the conformal mapping for the Waffle MOS element is rectangle shape in transformed domain, the solving of the effective channel W/L ratio of the element is become very easy because it is aspect ratio of rectangle in transformed domain.
Czech name
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Czech description
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Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proceedings - Electronic Devices and Systems - EDS '13
ISBN
9788021447547
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
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Publisher name
Vysoké učení technické v Brně, Fakulta elektrotechniky a komunikačních technologií
Place of publication
Brno
Event location
Brno
Event date
Jun 26, 2013
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
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