ON-state characteristics of proton irradiated 4H?SiC Schottky diode: The calibration of model parameters for device simulation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00213904" target="_blank" >RIV/68407700:21230/14:00213904 - isvavai.cz</a>
Result on the web
<a href="http://www.elsevier.com/locate/sse" target="_blank" >http://www.elsevier.com/locate/sse</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.sse.2014.02.004" target="_blank" >10.1016/j.sse.2014.02.004</a>
Alternative languages
Result language
angličtina
Original language name
ON-state characteristics of proton irradiated 4H?SiC Schottky diode: The calibration of model parameters for device simulation
Original language description
4H silicon carbide Schottky diodes were irradiated by 550 keV protons with the aim to place the ion range into the low-doped n-type epitaxial layer. The diodes were characterized using DLTS, C?V profiling and forward I?V curves. Calibration procedure ofmodel parameters for device simulation as been carried out. It is based on modeling the doping compensation of the n-type epitaxial layer caused by the deep acceptor levels resulting from radiation damage. It is shown that the agreement of simulated andmeasured forward I?V curves of proton irradiated diodes can be achieved, if the profiles of deep levels are calibrated with respect to irradiation dose, the degradation of electron mobility due to charged deep levels is accounted of and the Schottky barrier height is properly adjusted. The proposed methodology introduces a starting point for exact calibration of ion irradiated SiC unipolar devices.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Solid-State Electronics
ISSN
0038-1101
e-ISSN
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Volume of the periodical
94
Issue of the periodical within the volume
4
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
32-38
UT code for WoS article
000334097000008
EID of the result in the Scopus database
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