Characterization and simulation of neutron irradiated JBS silicon carbide diode structures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00217965" target="_blank" >RIV/68407700:21230/14:00217965 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.605.151" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/KEM.605.151</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.605.151" target="_blank" >10.4028/www.scientific.net/KEM.605.151</a>
Alternative languages
Result language
angličtina
Original language name
Characterization and simulation of neutron irradiated JBS silicon carbide diode structures
Original language description
This paper deals with an effect of radiation damage produced by fast neutrons on characteristics of JBS diodes produced on 4H-SiC, dynamic characterization methode for I-V measurement and SPICE model of neutron irradiated JBS diode.
Czech name
—
Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
—
Result continuities
Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
IC-MAST - 3rd International Conference on Materials and Applications for Sensors and Transducers
ISBN
9783038350514
ISSN
1013-9826
e-ISSN
—
Number of pages
4
Pages from-to
151-154
Publisher name
Transtech Publications
Place of publication
Zürich
Event location
Praha
Event date
Sep 13, 2013
Type of event by nationality
EUR - Evropská akce
UT code for WoS article
000348035600038