Analysis of Finfet Characteristics with Gate Length Scalling

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00223591" target="_blank" >RIV/68407700:21230/14:00223591 - isvavai.cz</a>
Result on the web
<a href="http://www.nanocon.eu/cz/" target="_blank" >http://www.nanocon.eu/cz/</a>
DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Analysis of Finfet Characteristics with Gate Length Scalling
Original language description
The effect of gate length variations of a FinFET device (6 x 7 nm width and height) by performing 3D Silvaco TCAD simulations was investigated. In addition, comparative Atomistics ToolKit by QuantumWise simulations were done, with a view to TCAD / ATK functionality at quantum effects. Both systems use Non- Equilibrium Green Functions (NEGF) for electron quantum transport simulation. The ATK tool uses the real atom positions in the device crystal lattice for the Density Functional Theory (DFT) based calculations moreover. It is found that the gate length influences the drain current mostly for small voltages. Short gate transistors show the saturation current for clearly lower voltages, the saturation current for longer gates is achieved for higher voltages but get lower values. Electron transmission functionality of system's energy has been analyzed as well. The ATK uses more precise quantum models, but the time consumption is enormous for the relative large structures as FinFET. 3D TC
Czech name
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Czech description
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Project
<a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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