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Evaluation of Oxide Thin Film Layers Prepared by Sputtering

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00338440" target="_blank" >RIV/68407700:21230/19:00338440 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1109/ISSE.2019.8810224" target="_blank" >https://doi.org/10.1109/ISSE.2019.8810224</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1109/ISSE.2019.8810224" target="_blank" >10.1109/ISSE.2019.8810224</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Evaluation of Oxide Thin Film Layers Prepared by Sputtering

  • Original language description

    Thin film layers are used in a wide range of fields (microchips, solar cells, etc.)because of the high dependency of their properties on the thickness of the layer. It is important to know how to achieve different thickness and quality of the layers by changing conditions of deposition. Samples of oxide thin film layers were prepared by magnetron sputtering. Two different materials were used - aluminum oxide and zinc oxide. Effect of different conditions (time and power of plasma)during the deposition was observed. The samples were evaluated from a few different points of view. Firstly, the thickness and capacity of each layer were measured. Thickness was also calculated from capacity and then compared to measured values. As expected, thickness increased with increasing time of deposition and with the increasing power of plasma during the deposition. Detail images of the layers were captured by an optical microscope and these images were processed in order to measure grain size. Average grain size was increasing with higher power during the deposition.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2019 42nd International Spring Seminar on Electronics Technology (ISSE)

  • ISBN

    978-1-7281-1874-1

  • ISSN

    2161-2528

  • e-ISSN

    2161-2536

  • Number of pages

    5

  • Pages from-to

  • Publisher name

    IEEE Press

  • Place of publication

    New York

  • Event location

    Wroclaw

  • Event date

    May 15, 2019

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000507501000020