Evaluation of Oxide Thin Film Layers Prepared by Sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00338440" target="_blank" >RIV/68407700:21230/19:00338440 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1109/ISSE.2019.8810224" target="_blank" >https://doi.org/10.1109/ISSE.2019.8810224</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE.2019.8810224" target="_blank" >10.1109/ISSE.2019.8810224</a>
Alternative languages
Result language
angličtina
Original language name
Evaluation of Oxide Thin Film Layers Prepared by Sputtering
Original language description
Thin film layers are used in a wide range of fields (microchips, solar cells, etc.)because of the high dependency of their properties on the thickness of the layer. It is important to know how to achieve different thickness and quality of the layers by changing conditions of deposition. Samples of oxide thin film layers were prepared by magnetron sputtering. Two different materials were used - aluminum oxide and zinc oxide. Effect of different conditions (time and power of plasma)during the deposition was observed. The samples were evaluated from a few different points of view. Firstly, the thickness and capacity of each layer were measured. Thickness was also calculated from capacity and then compared to measured values. As expected, thickness increased with increasing time of deposition and with the increasing power of plasma during the deposition. Detail images of the layers were captured by an optical microscope and these images were processed in order to measure grain size. Average grain size was increasing with higher power during the deposition.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2019 42nd International Spring Seminar on Electronics Technology (ISSE)
ISBN
978-1-7281-1874-1
ISSN
2161-2528
e-ISSN
2161-2536
Number of pages
5
Pages from-to
—
Publisher name
IEEE Press
Place of publication
New York
Event location
Wroclaw
Event date
May 15, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000507501000020