Kinetics of Sn whisker growth from Sn thin-films on Cu substrate
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00344952" target="_blank" >RIV/68407700:21230/20:00344952 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1007/s10854-020-04180-2" target="_blank" >https://doi.org/10.1007/s10854-020-04180-2</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/s10854-020-04180-2" target="_blank" >10.1007/s10854-020-04180-2</a>
Alternative languages
Result language
angličtina
Original language name
Kinetics of Sn whisker growth from Sn thin-films on Cu substrate
Original language description
The kinetics of Sn whisker growth was investigated on vacuum-evaporated Sn thin-films. Sn film layers were deposited on a Cu substrate with 0.5 and 1 mu m thicknesses. The samples were stored in room conditions (22 +/- 1 degrees C/50 +/- 5RH%) for 60 days. The Sn whiskers and the Cu-Sn layer structure underneath them were investigated with both scanning electron and ion microscopy. Fast Cu-Sn intermetallic formation resulted in considerable mechanical stress in the Sn layer, which initiated intensive whisker growth right after the layer deposition. The thinner Sn layer produced twice many whiskers compared to the thicker one. The lengths of the filament-type whiskers were similar, but the growth characteristics differed. The thinner Sn layer performed the highest whisker growth rates during the first 7 days, while the thicker Sn layer increased the growth rate only after 7 days. This phenomenon was explained by the cross-correlation of the stress relaxation ability of Sn layers and the amount of Sn atoms for whisker growth. The very high filament whisker growth rates might be caused by the interface flow mechanism, which could be initiated by the intermetallic layer growth itself. Furthermore, a correlation was found between the type of the whiskers and the morphology of the intermetallic layer underneath.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Journal of Materials Science: Materials in Electronics
ISSN
0957-4522
e-ISSN
1573-482X
Volume of the periodical
31
Issue of the periodical within the volume
19
Country of publishing house
US - UNITED STATES
Number of pages
10
Pages from-to
16314-16323
UT code for WoS article
000560292100001
EID of the result in the Scopus database
2-s2.0-85089462631