Power-scaled Laser-diode Pumped 747 nm Pr:YAlO3 Laser in Microchip Resonator Arrangement
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F14%3A00219636" target="_blank" >RIV/68407700:21340/14:00219636 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Power-scaled Laser-diode Pumped 747 nm Pr:YAlO3 Laser in Microchip Resonator Arrangement
Original language description
The power-scaled Pr:YAlO3 continuous-wave laser operation at 747 nm has been demonstrated. Microchip geometry realized by resonator mirrors directly deposited as a dielectric films on the crystal facets has been employed. Using both-side 1-W InGaN laser-diode pumping, continuous wave output power of 490 mW was reached in nearly diffraction limited beam. The corresponding slope efficiency related to the absorbed pump power was 45 %. We believe that this is the highest output power and slope efficiency ever reported from the Pr:YAlO3 crystal at room temperature.
Czech name
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Czech description
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Classification
Type
O - Miscellaneous
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GPP102%2F12%2FP505" target="_blank" >GPP102/12/P505: GaN-diode pumped Praseodymium laser systems</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů