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Electronic spectral densities and optical spectra of quantum dot aggregates in sub-wetting layer region.
We solve the problem of influence of wetting layer on spectra of 2-level quantum dots.
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Sub-Wetting layer continuum states in quantum dot samples.
Detail analysis of the influence of heavily populated wetting-layer states on optical spectra of quantum dots was presented.
BM - Fyzika pevných látek a magnetismus
- 2003 •
- D
Rok uplatnění
D - Stať ve sborníku
In As/GaAs multiple quantum-size structures grown by MOVPE.
MOVPE can be used in certain cases even for the preparation of sub monolayer layers like In sub monoatomic layer in GaAs. Structures with quantum size objects as self-organised InAs quantum dots (QDs), quantum<...
BM - Fyzika pevných látek a magnetismus
- 2001 •
- D
Rok uplatnění
D - Stať ve sborníku
Estimates on trapped modes in deformed quantum layers
We use the logarithmic Lieb-Thirring inequality for two-dimensional Schrodinger operators and establish estimates on trapped modes in geometrically deformed quantum layers....
BE - Teoretická fyzika
- 2008 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Gallium arsenide antimonite layer with graded composition for reducing strain in indium arsenide/gallium arsenide quantum dots
The quantum dot layer is covered by gallium arsenide antimonite strain reducing layer that are utilized for maintaining type I heterojunction between indium arsenide quantum dot and Gallium arsenide antimonite ...
BH - Optika, masery a lasery
- 2013 •
- P •
- Link
Rok uplatnění
P - Patent
Výsledek na webu
Optical spectra of quantum dot aggregates in sub-wetting layer region.
Optical properties of quantum dots at non-integer population of states are reported.
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
The paper investigates the influence of InGaAs and GaAsSb strain reducing layers covering on optical properties of InAs/GaAs quantum dots....
JA - Elektronika a optoelektronika, elektrotechnika
- 2010 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Carrier dynamics in InAs_AlAs quantum dots_ lack in carrier transfer from wetting layer to quantum dots
Structures with self-assembled InAs quantum dots (QDs) embedded in an AlAs by quantum dots directly from the AlAs matrix, while transfer of carriers captured by the wetting layer far away from QDs to the QDs is suppressed. ...
BH - Optika, masery a lasery
- 2010 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Role of LO phonons in optical spectra of quantum dot aggregates in sub-wetting layer region of energy.
Role of LO phonons in optical spectra of quantum dot id studied.
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Optical spectra of quantum dot aggergates in the sub-wetting layer region.
We study the origin of line broadening in spectra of quantum dots.
BM - Fyzika pevných látek a magnetismus
- 2003 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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