Large area scanning thermal microscopy and infrared imaging system

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F19%3AN0000111" target="_blank" >RIV/00177016:_____/19:N0000111 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216305:26110/19:PU131703

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/1361-6501/aafa96" target="_blank" >https://iopscience.iop.org/article/10.1088/1361-6501/aafa96</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6501/aafa96" target="_blank" >10.1088/1361-6501/aafa96</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Large area scanning thermal microscopy and infrared imaging system

Popis výsledku v původním jazyce

In today's highly integrated microelectronic systems there is a need for high-resolution spatial temperature measurement on chips. The resolution requirements are higher than the infrared imaging systems are capable of, and the investigated areas of the chips are often too large for most common scanning thermal microscopes. In this article we present two quantitative methods to acquire a thermal map with high resolution over a large area. We use two approaches: a noncontact method based on infrared radiation and scanning thermal microscopy (SThM). In both methods the expected thermal properties of the sample were thoroughly calculated and the prediction was in agreement with the experimental results. For the study of infrared radiation the composition of the sample together with the spectral sensitivity of the sensor were taken into account. In the SThM part, there were discrepancies based on unequal conditions during calibration and subsequent measurement. Using a finite element method simulation of the thermal field, the problem has been solved and successfully experimentally verified. For both methods a special sample with an embedded thermometer capable of being heated internally or externally was used

Název v anglickém jazyce

Large area scanning thermal microscopy and infrared imaging system

Popis výsledku anglicky

In today's highly integrated microelectronic systems there is a need for high-resolution spatial temperature measurement on chips. The resolution requirements are higher than the infrared imaging systems are capable of, and the investigated areas of the chips are often too large for most common scanning thermal microscopes. In this article we present two quantitative methods to acquire a thermal map with high resolution over a large area. We use two approaches: a noncontact method based on infrared radiation and scanning thermal microscopy (SThM). In both methods the expected thermal properties of the sample were thoroughly calculated and the prediction was in agreement with the experimental results. For the study of infrared radiation the composition of the sample together with the spectral sensitivity of the sensor were taken into account. In the SThM part, there were discrepancies based on unequal conditions during calibration and subsequent measurement. Using a finite element method simulation of the thermal field, the problem has been solved and successfully experimentally verified. For both methods a special sample with an embedded thermometer capable of being heated internally or externally was used

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Measurement Science and Technology

ISSN

09570233

e-ISSN

—

Svazek periodika

30

Číslo periodika v rámci svazku

3

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

12

Strana od-do

—

Kód UT WoS článku

000458904000003

EID výsledku v databázi Scopus

2-s2.0-85062499441