Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F19%3AN0000131" target="_blank" >RIV/00177016:_____/19:N0000131 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/19:00111207

Výsledek na webu

<a href="https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407" target="_blank" >https://journals.aps.org/prb/abstract/10.1103/PhysRevB.100.195407</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1103/PhysRevB.100.195407" target="_blank" >10.1103/PhysRevB.100.195407</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Popis výsledku v původním jazyce

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Název v anglickém jazyce

Optical response of (InGa)(AsSb)/GaAs quantum dots embedded in a GaP matrix

Popis výsledku anglicky

The optical response of (InGa)(AsSb)/GaAs quantum dots (QDs) grown on GaP (001) substrates is studied by means of excitation and temperature-dependent photoluminescence (PL), and it is related to their complex electronic structure. Such QDs exhibit concurrently direct and indirect transitions, which allows the swapping of Gamma and L quantum confined states in energy, depending on details of their stoichiometry. Based on realistic data on QD structure and composition, derived from high-resolution transmission electron microscopy (HRTEM) measurements, simulations by means of k.p theory are performed. The theoretical prediction of both momentum direct and indirect type-I optical transitions are confirmed by the experiments presented here. Additional investigations by a combination of Raman and photoreflectance spectroscopy show modifications of the hydrostatic strain in the QD layer, depending on the sequential addition of QDs and capping layer. A variation of the excitation density across four orders of magnitude reveals a 50-meV energy blueshift of the QD emission. Our findings suggest that the assignment of the type of transition, based solely by the observation of a blueshift with increased pumping, is insufficient. We propose therefore a more consistent approach based on the analysis of the character of the blueshift evolution with optical pumping, which employs a numerical model based on a semi-self-consistent configuration interaction method.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B

ISSN

24699950

e-ISSN

—

Svazek periodika

100

Číslo periodika v rámci svazku

19

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

19

Strana od-do

195407-195425

Kód UT WoS článku

000495049700003

EID výsledku v databázi Scopus

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