Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F24%3AN0000057" target="_blank" >RIV/00177016:_____/24:N0000057 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/24:00135509

Výsledek na webu

<a href="https://pubs.aip.org/aip/apl/article/124/6/061102/3262374/Epitaxial-growth-and-characterization-of-multi" target="_blank" >https://pubs.aip.org/aip/apl/article/124/6/061102/3262374/Epitaxial-growth-and-characterization-of-multi</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0187074" target="_blank" >10.1063/5.0187074</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Popis výsledku v původním jazyce

We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This deterministic growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve spectral control of emission and a local increase in the emitter density. Furthermore, we achieve a threefold increase in the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is valuable for using the SCQDs as a gain medium in microlaser applications. Our optimization of site-controlled growth of quantum dots enables the development of high-beta microlasers with increased confinement factor.

Název v anglickém jazyce

Epitaxial growth and characterization of multi-layer site-controlled InGaAs quantum dots based on the buried stressor method

Popis výsledku anglicky

We report on the epitaxial growth, theoretical modeling, and structural as well as optical investigation of multi-layer, site-controlled quantum dots fabricated using the buried stressor method. This deterministic growth technique utilizes the strain from a partially oxidized AlAs layer to induce site-selective nucleation of InGaAs quantum dots. By implementing strain-induced spectral nano-engineering, we achieve spectral control of emission and a local increase in the emitter density. Furthermore, we achieve a threefold increase in the optical intensity and reduce the inhomogeneous broadening of the ensemble emission by 20% via stacking three layers of site-controlled emitters, which is valuable for using the SCQDs as a gain medium in microlaser applications. Our optimization of site-controlled growth of quantum dots enables the development of high-beta microlasers with increased confinement factor.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

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OECD FORD obor

10306 - Optics (including laser optics and quantum optics)

Projekt

<a href="/cs/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Kvantové materiály pro aplikace v udržitelných technologiích</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Physics Letters

ISSN

0003-6951

e-ISSN

1077-3118

Svazek periodika

124

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

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Kód UT WoS článku

001158728800013

EID výsledku v databázi Scopus

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