Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00177016%3A_____%2F25%3AN0000049" target="_blank" >RIV/00177016:_____/25:N0000049 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216224:14310/25:00141184

Výsledek na webu

<a href="https://iopscience.iop.org/article/10.1088/2633-4356/add3ad" target="_blank" >https://iopscience.iop.org/article/10.1088/2633-4356/add3ad</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/2633-4356/add3ad" target="_blank" >10.1088/2633-4356/add3ad</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots

Popis výsledku v původním jazyce

Semiconductor quantum dots (QDs) are high-quality nanocrystals that provide three-dimensional carrier confinement on the scale of the de Broglie wavelength. This makes them ideal candidates as light emitters, especially in the emerging field of photonic quantum technologies, where they can act as quantum light sources. However, their self-assembled epitaxial growth leads to randomness in position and emission wavelength, which hinders their scalable integration into photonic quantum devices. This review summarizes and highlights advances in the site-controlled growth of high-quality epitaxial QDs, with a particular focus on the buried stressor concept. Compared to other QD positioning techniques based for instance on nanohole arrays, nanowire arrays, and arrays of inverted pyramids as dot nucleation centers, the buried stressor growth method is distinguished by its ability to achieve not only spatial accuracy and precision, but also control of the local QD density in combination in an industry-compatible process flow. Therefore, the buried stressor growth technique is highly suitable for the development of both QD-based quantum light sources and microlasers. The buried stressor site-controlled QD growth technique involves the sub-surface embedding of a nano-engineered stressor material, which generates localized strain fields at the growth surface that control the nucleation of QDs. We provide an in-depth review of the underlying mechanisms and technological implementations, and discuss the differences and comparative advantages of the buried stressor method over other techniques for site-controlled growth of QDs. We also address persistent challenges, such as scalability and integration with existing semiconductor technologies, and outline potential future research directions.

Název v anglickém jazyce

Buried-stressor technology for the epitaxial growth and device integration of site-controlled quantum dots

Popis výsledku anglicky

Semiconductor quantum dots (QDs) are high-quality nanocrystals that provide three-dimensional carrier confinement on the scale of the de Broglie wavelength. This makes them ideal candidates as light emitters, especially in the emerging field of photonic quantum technologies, where they can act as quantum light sources. However, their self-assembled epitaxial growth leads to randomness in position and emission wavelength, which hinders their scalable integration into photonic quantum devices. This review summarizes and highlights advances in the site-controlled growth of high-quality epitaxial QDs, with a particular focus on the buried stressor concept. Compared to other QD positioning techniques based for instance on nanohole arrays, nanowire arrays, and arrays of inverted pyramids as dot nucleation centers, the buried stressor growth method is distinguished by its ability to achieve not only spatial accuracy and precision, but also control of the local QD density in combination in an industry-compatible process flow. Therefore, the buried stressor growth technique is highly suitable for the development of both QD-based quantum light sources and microlasers. The buried stressor site-controlled QD growth technique involves the sub-surface embedding of a nano-engineered stressor material, which generates localized strain fields at the growth surface that control the nucleation of QDs. We provide an in-depth review of the underlying mechanisms and technological implementations, and discuss the differences and comparative advantages of the buried stressor method over other techniques for site-controlled growth of QDs. We also address persistent challenges, such as scalability and integration with existing semiconductor technologies, and outline potential future research directions.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10300 - Physical sciences

Projekt

<a href="/cs/project/EH22_008%2F0004572" target="_blank" >EH22_008/0004572: Kvantové materiály pro aplikace v udržitelných technologiích</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2025

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

MATERIALS FOR QUANTUM TECHNOLOGY

ISSN

2633-4356

e-ISSN

—

Svazek periodika

5

Číslo periodika v rámci svazku

2

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

26

Strana od-do

—

Kód UT WoS článku

001489136100001

EID výsledku v databázi Scopus

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