Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F17%3A10368323" target="_blank" >RIV/00216208:11310/17:10368323 - isvavai.cz</a>

Výsledek na webu

<a href="https://doi.org/10.1039/c6nr08522a" target="_blank" >https://doi.org/10.1039/c6nr08522a</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1039/c6nr08522a" target="_blank" >10.1039/c6nr08522a</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer

Popis výsledku v původním jazyce

A great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with a large non-trivial band gap, room-temperature magnetic order and high carrier mobility. Based on first-principles calculations it is shown here that a nickel chloride (NiCl3) monolayer has all these characteristics. Thus, the NiCl3 monolayer represents a new class of Dirac materials with Dirac spin-gapless semiconducting properties and high-temperature ferromagnetism (similar to 400 K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic Chern insulator with a large non-trivial band gap of similar to 24 meV, corresponding to an operating temperature as high as similar to 280 K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer led us to propose that this material gives a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermions of about 4 x 10(5) m s(-1) indicate very high mobility in NiCl3 monolayers.

Název v anglickém jazyce

Near-room-temperature Chern insulator and Dirac spin-gapless semiconductor: nickel chloride monolayer

Popis výsledku anglicky

A great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with a large non-trivial band gap, room-temperature magnetic order and high carrier mobility. Based on first-principles calculations it is shown here that a nickel chloride (NiCl3) monolayer has all these characteristics. Thus, the NiCl3 monolayer represents a new class of Dirac materials with Dirac spin-gapless semiconducting properties and high-temperature ferromagnetism (similar to 400 K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic Chern insulator with a large non-trivial band gap of similar to 24 meV, corresponding to an operating temperature as high as similar to 280 K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer led us to propose that this material gives a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermions of about 4 x 10(5) m s(-1) indicate very high mobility in NiCl3 monolayers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

<a href="/cs/project/GBP106%2F12%2FG015" target="_blank" >GBP106/12/G015: Vývoj nových nanoporézních adsorbentů a katalyzátorů</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nanoscale

ISSN

2040-3364

e-ISSN

—

Svazek periodika

9

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

7

Strana od-do

2246-2252

Kód UT WoS článku

000395626600019

EID výsledku v databázi Scopus

2-s2.0-85012113479