Control of Polaronic Behavior and Carrier Lifetimes via Metal and Anion Alloying in Chalcogenide Perovskites

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11310%2F22%3A10450815" target="_blank" >RIV/00216208:11310/22:10450815 - isvavai.cz</a>

Výsledek na webu

<a href="https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=L7KG2oyGIP" target="_blank" >https://verso.is.cuni.cz/pub/verso.fpl?fname=obd_publikace_handle&handle=L7KG2oyGIP</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acs.jpclett.2c00880" target="_blank" >10.1021/acs.jpclett.2c00880</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Control of Polaronic Behavior and Carrier Lifetimes via Metal and Anion Alloying in Chalcogenide Perovskites

Popis výsledku v původním jazyce

Transition-metal perovskite chalcogenides (TMPCs) have emerged as lead-free alternatives to lead-halide perovskites and have been currently of increasing interest for optoelectronic applications because of their suitable band gaps, high carrier mobility, strong light absorption, and high stability. Here, we systematically report a study on the effects of Ti- and Se-alloying strategies on polaron behavior and carrier lifetimes in nonradiative recombination. Although such alloying can effectively tune the band gap of BaZrS3, we observe localized small polaron formation upon Ti alloying and large polarons generating in Se alloying. Ti-alloying strengthens the electron-phonon coupling, leading to a reduced carrier lifetime. Remarkably, Se-alloying weakens the electron-phonon coupling and prolongs the nonradiative electron-hole recombination lifetime by up to 60% compared to that in pristine BaZrS3 material. The simulations rationalize the difference in carrier lifetimes in TMPC alloys and provide guidelines for further improvements in TMPC-based photoelectronic devices.

Název v anglickém jazyce

Control of Polaronic Behavior and Carrier Lifetimes via Metal and Anion Alloying in Chalcogenide Perovskites

Popis výsledku anglicky

Transition-metal perovskite chalcogenides (TMPCs) have emerged as lead-free alternatives to lead-halide perovskites and have been currently of increasing interest for optoelectronic applications because of their suitable band gaps, high carrier mobility, strong light absorption, and high stability. Here, we systematically report a study on the effects of Ti- and Se-alloying strategies on polaron behavior and carrier lifetimes in nonradiative recombination. Although such alloying can effectively tune the band gap of BaZrS3, we observe localized small polaron formation upon Ti alloying and large polarons generating in Se alloying. Ti-alloying strengthens the electron-phonon coupling, leading to a reduced carrier lifetime. Remarkably, Se-alloying weakens the electron-phonon coupling and prolongs the nonradiative electron-hole recombination lifetime by up to 60% compared to that in pristine BaZrS3 material. The simulations rationalize the difference in carrier lifetimes in TMPC alloys and provide guidelines for further improvements in TMPC-based photoelectronic devices.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10403 - Physical chemistry

Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2022

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physical Chemistry Letters

ISSN

1948-7185

e-ISSN

1948-7185

Svazek periodika

13

Číslo periodika v rámci svazku

22

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

4955-4962

Kód UT WoS článku

000810232400001

EID výsledku v databázi Scopus

2-s2.0-85131771971