Impact of Small Phonon Energies on the Charge-Carrier Lifetimes in Metal-Halide Perovskites
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00324577" target="_blank" >RIV/68407700:21230/18:00324577 - isvavai.cz</a>
Výsledek na webu
<a href="http://dx.doi.org/10.1021/acs.jpclett.7b03414" target="_blank" >http://dx.doi.org/10.1021/acs.jpclett.7b03414</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/acs.jpclett.7b03414" target="_blank" >10.1021/acs.jpclett.7b03414</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Impact of Small Phonon Energies on the Charge-Carrier Lifetimes in Metal-Halide Perovskites
Popis výsledku v původním jazyce
Metal-halide perovskite (MHP) solar cells exhibit long non-radiative lifetimes as a crucial feature enabling high efficiencies. Long non-radiative lifetimes occur if the transfer of electronic into vibrational energy is slow due to, e.g., a low trap density, weak electronphonon coupling or the requirement to release a many phonons in the electronic transition. Here, we combine known material properties of MHPs with basic models for electron-phonon coupling and multiphonon-transition rates in polar semiconductors. We find that the low phonon energies of MAPbI3 lead to a strong dependence of recombination rates on trap position, which we deduce from the underlying physical effects determining non-radiative transitions. This is important for non-radiative recombination in MHPs, as it implies that they are rather insensitive to defects that are not at midgap energy, which can lead to long lifetimes. Therefore, the low phonon energies of MHPs are likely an important factor for their optoelectronic performance.
Název v anglickém jazyce
Impact of Small Phonon Energies on the Charge-Carrier Lifetimes in Metal-Halide Perovskites
Popis výsledku anglicky
Metal-halide perovskite (MHP) solar cells exhibit long non-radiative lifetimes as a crucial feature enabling high efficiencies. Long non-radiative lifetimes occur if the transfer of electronic into vibrational energy is slow due to, e.g., a low trap density, weak electronphonon coupling or the requirement to release a many phonons in the electronic transition. Here, we combine known material properties of MHPs with basic models for electron-phonon coupling and multiphonon-transition rates in polar semiconductors. We find that the low phonon energies of MAPbI3 lead to a strong dependence of recombination rates on trap position, which we deduce from the underlying physical effects determining non-radiative transitions. This is important for non-radiative recombination in MHPs, as it implies that they are rather insensitive to defects that are not at midgap energy, which can lead to long lifetimes. Therefore, the low phonon energies of MHPs are likely an important factor for their optoelectronic performance.
Klasifikace
Druh
J<sub>imp</sub> - Článek v periodiku v databázi Web of Science
CEP obor
—
OECD FORD obor
20704 - Energy and fuels
Návaznosti výsledku
Projekt
<a href="/cs/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centrum pokročilé fotovoltaiky</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Ostatní
Rok uplatnění
2018
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
Journal of Physical Chemistry Letters
ISSN
1948-7185
e-ISSN
—
Svazek periodika
9
Číslo periodika v rámci svazku
5
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
8
Strana od-do
939-946
Kód UT WoS článku
000426803200002
EID výsledku v databázi Scopus
2-s2.0-85042728499