Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F10%3A10070069" target="_blank" >RIV/00216208:11320/10:10070069 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi

Popis výsledku v původním jazyce

We investigate the origin of scanning tunneling microscope (STM) contrast in lateral Ge-Si nanostructures prepared on the Si(111)-V3xV3-Bi surface [Phys. Rev. Lett. 91, 096102 (2003)]. At low sample bias, the voltage-dependent apparent height differencebetween Si- and Ge-terminated areas in STM images corresponds exceptionally well to the difference in voltage integrated scanning tunneling spectroscopy (STS) curves measured in Si- and Ge-terminated areas. The STS curves and the STM contrast reflect both differences in local density of states and in tip-induced effects in Si and Ge-terminated areas. At higher bias voltage, the tunneling into unoccupied states on Ge-terminated areas is strongly influenced by lowering of the local height of the tunnelingbarrier with respect to Si. The lowering of the local tunneling barrier height vanishes for the occupied states and can be traced back to different tip-induced band bending on Si- and Ge-terminated areas.

Název v anglickém jazyce

Scanning tunneling microscopy contrast in lateral Ge-Si nanostructures on Si(111)-sqrt(3)xsqrt(3)-Bi

Popis výsledku anglicky

We investigate the origin of scanning tunneling microscope (STM) contrast in lateral Ge-Si nanostructures prepared on the Si(111)-V3xV3-Bi surface [Phys. Rev. Lett. 91, 096102 (2003)]. At low sample bias, the voltage-dependent apparent height differencebetween Si- and Ge-terminated areas in STM images corresponds exceptionally well to the difference in voltage integrated scanning tunneling spectroscopy (STS) curves measured in Si- and Ge-terminated areas. The STS curves and the STM contrast reflect both differences in local density of states and in tip-induced effects in Si and Ge-terminated areas. At higher bias voltage, the tunneling into unoccupied states on Ge-terminated areas is strongly influenced by lowering of the local height of the tunnelingbarrier with respect to Si. The lowering of the local tunneling barrier height vanishes for the occupied states and can be traced back to different tip-induced band bending on Si- and Ge-terminated areas.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2010

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physical Review B - Condensed Matter and Materials Physics

ISSN

1098-0121

e-ISSN

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Svazek periodika

81

Číslo periodika v rámci svazku

24

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

10

Strana od-do

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Kód UT WoS článku

000279145200001

EID výsledku v databázi Scopus

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