Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10101026" target="_blank" >RIV/00216208:11320/11:10101026 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nima.2010.06.134" target="_blank" >http://dx.doi.org/10.1016/j.nima.2010.06.134</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2010.06.134" target="_blank" >10.1016/j.nima.2010.06.134</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux

Popis výsledku v původním jazyce

With the growing interest in CdTe detectors operating at high fluxes of X-ray photons the questions arises, whether the lifetime of charge carriers is limited by trapping and recombination at deep levels or by band-to-band recombination due to a stronglyelevated concentrations of free electrons and holes compared to detectors working at low fluxes. A set of numerical simulations was done to resolve this question. The approach is based on the self-consistent steady state solution of electron and hole drift-diffusion equations using an iterative method. The effect of space charge on the electric field distribution and carrier transport through the sample is evaluated by solving the Poisson equation. The material simulation parameters were chosen to describe typical situations in state-of-the highly compensated semi-insulated CdTe and CdZnTe with deep near-midgap levels with concentrations in the range of 1011-1012 cm?3.

Název v anglickém jazyce

Factors limiting lifetime of charge carriers in semi-insulated CdTe under high radiation flux

Popis výsledku anglicky

With the growing interest in CdTe detectors operating at high fluxes of X-ray photons the questions arises, whether the lifetime of charge carriers is limited by trapping and recombination at deep levels or by band-to-band recombination due to a stronglyelevated concentrations of free electrons and holes compared to detectors working at low fluxes. A set of numerical simulations was done to resolve this question. The approach is based on the self-consistent steady state solution of electron and hole drift-diffusion equations using an iterative method. The effect of space charge on the electric field distribution and carrier transport through the sample is evaluated by solving the Poisson equation. The material simulation parameters were chosen to describe typical situations in state-of-the highly compensated semi-insulated CdTe and CdZnTe with deep near-midgap levels with concentrations in the range of 1011-1012 cm?3.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments & Methods in Physics Research - Section A

ISSN

0168-9002

e-ISSN

—

Svazek periodika

633

Číslo periodika v rámci svazku

—

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

2

Strana od-do

95-96

Kód UT WoS článku

000292782400029

EID výsledku v databázi Scopus

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