Polarization Study of Defect Structure of CdTe
Identifikátory výsledku
Kód výsledku v IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10105670" target="_blank" >RIV/00216208:11320/11:10105670 - isvavai.cz</a>
Výsledek na webu
<a href="http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=6&asf_rpp=null&asf_iv=58&asf_sp=3172&asf_pn=1" target="_blank" >http://ieeexplore.ieee.org/xpl/tocresult.jsp?asf_arn=null&asf_iid=0&asf_pun=23&asf_in=6&asf_rpp=null&asf_iv=58&asf_sp=3172&asf_pn=1</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/TNS.2011.2165730" target="_blank" >10.1109/TNS.2011.2165730</a>
Alternativní jazyky
Jazyk výsledku
angličtina
Název v původním jazyce
Polarization Study of Defect Structure of CdTe
Popis výsledku v původním jazyce
Polarization of CdTe radiation detectors in the dark was studied theoretically by taking into account a wide set of detector characteristics relevant to the polarization. Drift-diffusion and Poisson equations were solved numerically in one dimension in time-resolved regime, where the characteristic time is determined by the charging of detector bulk. Shockley-Read-Hall model describes the trapping/detrapping of free carriers. Both diode-like (In,Al)/CdTe/Pt and symmetrical (In,Al,Pt)/CdTe/(In,Al,Pt) detectors were considered. We showed how the space charge is formed in time after detector biasing and a dead layer appears in the detector when the accumulated charge screens the bias. Numerical results were compared with the Conventional model of charge accumulation. The influence of temperature on polarization was analyzed and the polarization is correlated with current transient. The approach can be conveniently used to find principal properties of trap levels and contacts in semiconduc
Název v anglickém jazyce
Polarization Study of Defect Structure of CdTe
Popis výsledku anglicky
Polarization of CdTe radiation detectors in the dark was studied theoretically by taking into account a wide set of detector characteristics relevant to the polarization. Drift-diffusion and Poisson equations were solved numerically in one dimension in time-resolved regime, where the characteristic time is determined by the charging of detector bulk. Shockley-Read-Hall model describes the trapping/detrapping of free carriers. Both diode-like (In,Al)/CdTe/Pt and symmetrical (In,Al,Pt)/CdTe/(In,Al,Pt) detectors were considered. We showed how the space charge is formed in time after detector biasing and a dead layer appears in the detector when the accumulated charge screens the bias. Numerical results were compared with the Conventional model of charge accumulation. The influence of temperature on polarization was analyzed and the polarization is correlated with current transient. The approach can be conveniently used to find principal properties of trap levels and contacts in semiconduc
Klasifikace
Druh
J<sub>x</sub> - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
CEP obor
BM - Fyzika pevných látek a magnetismus
OECD FORD obor
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Návaznosti výsledku
Projekt
<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>
Návaznosti
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach
Ostatní
Rok uplatnění
2011
Kód důvěrnosti údajů
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Údaje specifické pro druh výsledku
Název periodika
IEEE Transactions on Nuclear Science
ISSN
0018-9499
e-ISSN
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Svazek periodika
58
Číslo periodika v rámci svazku
6
Stát vydavatele periodika
US - Spojené státy americké
Počet stran výsledku
10
Strana od-do
3172-3181
Kód UT WoS článku
000301285700004
EID výsledku v databázi Scopus
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