Development of n-on-p silicon sensors for very high radiation environments

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106627" target="_blank" >RIV/00216208:11320/11:10106627 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/11:00361396

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nima.2010.04.080" target="_blank" >http://dx.doi.org/10.1016/j.nima.2010.04.080</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2010.04.080" target="_blank" >10.1016/j.nima.2010.04.080</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Development of n-on-p silicon sensors for very high radiation environments

Popis výsledku v původním jazyce

We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1 x 10(15) neq/cm(2) and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm x 9.75 cm large-area sensor and several 1 cm x 1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p(+) concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the

Název v anglickém jazyce

Development of n-on-p silicon sensors for very high radiation environments

Popis výsledku anglicky

We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1 x 10(15) neq/cm(2) and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm x 9.75 cm large-area sensor and several 1 cm x 1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p(+) concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. The first fabrication batch allowed us to identify the weak spots in the PTP and the stereo strip layouts. By understanding the source of the weakness, the mask was modified accordingly. After modification, the

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BF - Elementární částice a fyzika vysokých energií

OECD FORD obor

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Projekt

<a href="/cs/project/LA08032" target="_blank" >LA08032: Mezinárodní experiment ATLAS-CERN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

636

Číslo periodika v rámci svazku

—

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

"S26"-"S30"

Kód UT WoS článku

000291416400005

EID výsledku v databázi Scopus

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