Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10106589" target="_blank" >RIV/00216208:11320/11:10106589 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/11:00361395

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.nima.2010.04.093" target="_blank" >http://dx.doi.org/10.1016/j.nima.2010.04.093</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.nima.2010.04.093" target="_blank" >10.1016/j.nima.2010.04.093</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

Popis výsledku v původním jazyce

The ATLAS collaboration R&amp;amp;amp;amp;amp;amp;amp;amp;D group "Development of n-in-p Silicon Sensors for very high radiation environment" has developed single-sided p-type 9.75 cm x 9.75 cm sensors with an n-type readout strips having radiation tolerance against the 10(15) 1-MeV neutron equivalent (n(eq))/cm(2) fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of

Název v anglickém jazyce

Evaluation of the bulk and strip characteristics of large area n-in-p silicon sensors intended for a very high radiation environment

Popis výsledku anglicky

The ATLAS collaboration R&amp;amp;amp;amp;amp;amp;amp;amp;D group "Development of n-in-p Silicon Sensors for very high radiation environment" has developed single-sided p-type 9.75 cm x 9.75 cm sensors with an n-type readout strips having radiation tolerance against the 10(15) 1-MeV neutron equivalent (n(eq))/cm(2) fluence expected in the Super Large Hadron Collider. The compiled results of an evaluation of the bulk and strip parameter characteristics of 19 new non-irradiated sensors manufactured by Hamamatsu Photonics are presented in this paper. It was verified in detail that the sensors comply with the technical specifications required before irradiation. The reverse bias voltage dependence of various parameters, frequency dependence of tested capacitances, and strip scans of more than 23,000 strips as a test of parameter uniformity and strip quality over the whole sensor area have been carried out at Stony Brook University, Cambridge University, University of Geneva, and Academy of

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BF - Elementární částice a fyzika vysokých energií

OECD FORD obor

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Projekt

<a href="/cs/project/LA08032" target="_blank" >LA08032: Mezinárodní experiment ATLAS-CERN</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

ISSN

0168-9002

e-ISSN

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Svazek periodika

636

Číslo periodika v rámci svazku

—

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

"S114"-"S120"

Kód UT WoS článku

000291416400018

EID výsledku v databázi Scopus

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