Growth of Al(2)O(3) Nanowires on the Cu-9 at.% Al(111) Single Crystal Surface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10108198" target="_blank" >RIV/00216208:11320/11:10108198 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1111/j.1551-2916.2011.04704.x" target="_blank" >http://dx.doi.org/10.1111/j.1551-2916.2011.04704.x</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1111/j.1551-2916.2011.04704.x" target="_blank" >10.1111/j.1551-2916.2011.04704.x</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Growth of Al(2)O(3) Nanowires on the Cu-9 at.% Al(111) Single Crystal Surface

Popis výsledku v původním jazyce

Aluminum oxide structures were grown on Cu-9 at.% Al(111) single crystals. Usually alumina grows in the form of an epitaxial thin film. The process is based on Al atom segregation and subsequent oxidation of the Al topmost surface. Strong temperature dependence of the alumina growth mode was observed during the oxidation of a Cu-9 at.% Al single crystal. In this work we have reported for the first time the formation of alumina wire-like nanostructures on the substrate surface during high-temperature oxidation at low pressure. The nanowire growth was observed during substrate annealing at 1070 K while annealing at 910 K led to the formation of a flat and continuous thin alumina layer. Morphology, chemical composition, and structure characterization of the prepared nanostructures was done by means of scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. The experimental results point to the formation of T alumina phas

Název v anglickém jazyce

Growth of Al(2)O(3) Nanowires on the Cu-9 at.% Al(111) Single Crystal Surface

Popis výsledku anglicky

Aluminum oxide structures were grown on Cu-9 at.% Al(111) single crystals. Usually alumina grows in the form of an epitaxial thin film. The process is based on Al atom segregation and subsequent oxidation of the Al topmost surface. Strong temperature dependence of the alumina growth mode was observed during the oxidation of a Cu-9 at.% Al single crystal. In this work we have reported for the first time the formation of alumina wire-like nanostructures on the substrate surface during high-temperature oxidation at low pressure. The nanowire growth was observed during substrate annealing at 1070 K while annealing at 910 K led to the formation of a flat and continuous thin alumina layer. Morphology, chemical composition, and structure characterization of the prepared nanostructures was done by means of scanning electron microscopy, energy-dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, and X-ray diffraction. The experimental results point to the formation of T alumina phas

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of the American Ceramic Society

ISSN

0002-7820

e-ISSN

—

Svazek periodika

94

Číslo periodika v rámci svazku

11

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

5

Strana od-do

4084-4088

Kód UT WoS článku

000297026700078

EID výsledku v databázi Scopus

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