Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F11%3A10109233" target="_blank" >RIV/00216208:11320/11:10109233 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1021/nl201610g" target="_blank" >http://dx.doi.org/10.1021/nl201610g</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/nl201610g" target="_blank" >10.1021/nl201610g</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires

Popis výsledku v původním jazyce

Single silicon nanowires (Si-NWs) prepared by electronbeam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities. Spectral images of individual Si-NWs reveal a large variability of photoluminescence (PL) along a single Si-NW. The weaker broad emission band asymmetrically extended to the high-energy side is interpreted to be due to recombination of quasi-free 1D excitons while the brighter localized emission features (with significantly variable peak position, width, and shape) are due to localization of electron-hole pairs in surface protrusions acting like quasi-0D centers or quantum dots (QDs). Correlated PL and scanning electron microscopy images indicate thatthe efficiently emitting QDs are located at the Si-NW interface with completely oxidized neck of the initial Si wall. Theoretical fitting of the delocalized PL emission band explains its broad asymmetrical band to be due to the Gaussian s

Název v anglickém jazyce

Coexistence of quasi-1D and 0D photoluminescence from single silicon nanowires

Popis výsledku anglicky

Single silicon nanowires (Si-NWs) prepared by electronbeam lithography and reactive-ion etching are investigated by imaging optical spectroscopy under variable temperatures and laser pumping intensities. Spectral images of individual Si-NWs reveal a large variability of photoluminescence (PL) along a single Si-NW. The weaker broad emission band asymmetrically extended to the high-energy side is interpreted to be due to recombination of quasi-free 1D excitons while the brighter localized emission features (with significantly variable peak position, width, and shape) are due to localization of electron-hole pairs in surface protrusions acting like quasi-0D centers or quantum dots (QDs). Correlated PL and scanning electron microscopy images indicate thatthe efficiently emitting QDs are located at the Si-NW interface with completely oxidized neck of the initial Si wall. Theoretical fitting of the delocalized PL emission band explains its broad asymmetrical band to be due to the Gaussian s

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BH - Optika, masery a lasery

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>Z - Vyzkumny zamer (s odkazem do CEZ)

Rok uplatnění

2011

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Nano Letters

ISSN

1530-6984

e-ISSN

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Svazek periodika

11

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

3003-3009

Kód UT WoS článku

000292849400075

EID výsledku v databázi Scopus

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