Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F13%3A00391944" target="_blank" >RIV/68378271:_____/13:00391944 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21230/13:00201671

Výsledek na webu

<a href="http://dx.doi.org/10.1088/0022-3727/46/9/095103" target="_blank" >http://dx.doi.org/10.1088/0022-3727/46/9/095103</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/0022-3727/46/9/095103" target="_blank" >10.1088/0022-3727/46/9/095103</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition

Popis výsledku v původním jazyce

The aim of this work is to redshift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the MOVPE prepared structure of InAs/GaAs QDs covered by GaAsSb strain reducing layer. Our results proved that the type I ortype II band alignment can be controlled by both, GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of QD structure. The simulation of electron structure inInAs QD covered with GaAsSb strain reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPEprepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV red shift in comparison to similarly prepared QDs covered by GaAs.

Název v anglickém jazyce

Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition

Popis výsledku anglicky

The aim of this work is to redshift quantum dot (QD) photoluminescence (PL) towards telecommunication wavelengths by engineering the MOVPE prepared structure of InAs/GaAs QDs covered by GaAsSb strain reducing layer. Our results proved that the type I ortype II band alignment can be controlled by both, GaAsSb composition and QD size. Maintaining type I heterostructure is important for high luminescence efficiency and emission wavelength stability of QD structure. The simulation of electron structure inInAs QD covered with GaAsSb strain reducing layer as well as experimental results suggest the importance of increasing QD size for obtaining a longer wavelength PL from type I heterostructure. The PL maximum wavelength 1371 nm was achieved for the MOVPEprepared type I QD structure with 14% of Sb in GaAsSb. This type of structure exhibits seven times higher PL intensity, twice narrower PL peak and 85 meV red shift in comparison to similarly prepared QDs covered by GaAs.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Physics D-Applied Physics

ISSN

0022-3727

e-ISSN

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Svazek periodika

46

Číslo periodika v rámci svazku

9

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

"095103-1"-"095103-9"

Kód UT WoS článku

000314819500011

EID výsledku v databázi Scopus

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