Study on electric field in Au/CdZnTe/In detectors under high fluxes of X-ray and laser irradiation

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125912" target="_blank" >RIV/00216208:11320/12:10125912 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1088/1748-0221/7/02/P02011" target="_blank" >http://dx.doi.org/10.1088/1748-0221/7/02/P02011</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1748-0221/7/02/P02011" target="_blank" >10.1088/1748-0221/7/02/P02011</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study on electric field in Au/CdZnTe/In detectors under high fluxes of X-ray and laser irradiation

Popis výsledku v původním jazyce

We used simultaneous Pockels effect and photoconductivity measurements to study of processes in high-resistivity CdZnTe semiconductor X-ray and gamma ray detector material at steady state high flux conditions. We have proven, that with an appropriate choice of monochromatic laser light, the profile of the electric field is nearly the same as with a polychromatic X-ray source. We observed that the electric field is strongly deformed in the case of both above and below bandgap laser radiation. This leadsto a decrease of the photocurrent when the sample is illuminated with above bandgap radiation. When below bandgap illumination is used the photocurrent values are not affected by electric field weakening. This is explained by increased filling of the midgap trap with trapped electrons leading to an increase of the lifetime.

Název v anglickém jazyce

Study on electric field in Au/CdZnTe/In detectors under high fluxes of X-ray and laser irradiation

Popis výsledku anglicky

We used simultaneous Pockels effect and photoconductivity measurements to study of processes in high-resistivity CdZnTe semiconductor X-ray and gamma ray detector material at steady state high flux conditions. We have proven, that with an appropriate choice of monochromatic laser light, the profile of the electric field is nearly the same as with a polychromatic X-ray source. We observed that the electric field is strongly deformed in the case of both above and below bandgap laser radiation. This leadsto a decrease of the photocurrent when the sample is illuminated with above bandgap radiation. When below bandgap illumination is used the photocurrent values are not affected by electric field weakening. This is explained by increased filling of the midgap trap with trapped electrons leading to an increase of the lifetime.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Instrumentation

ISSN

1748-0221

e-ISSN

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Svazek periodika

7

Číslo periodika v rámci svazku

Neuveden

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

10

Strana od-do

"P02011"-"P02020"

Kód UT WoS článku

000303940900077

EID výsledku v databázi Scopus

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