Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10125920" target="_blank" >RIV/00216208:11320/12:10125920 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1109/TNS.2012.2191159" target="_blank" >http://dx.doi.org/10.1109/TNS.2012.2191159</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2012.2191159" target="_blank" >10.1109/TNS.2012.2191159</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization

Popis výsledku v původním jazyce

As yet, the role of the main native defects in the compensation, trapping, and polarization of x-ray and gamma-ray room-temperature detectors based on semi-insulated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) is indeterminate. To betterquantify it, we assessed the ionization energy, i.e., the binding energy for the hole of the second (2-/1-) acceptor level of Cd vacancies in Cd1-xZnxTe(x approximate to 0.1). We characterized the defects in several ways, including measuring the photoconductivity at below-bandgap excitation, and photoconductivity quenching by comparing their positions in the bandgap with that of the native energy-levels in CdTe quantum dots (QDs) and other II-VI semiconductors. In this way, we determined unambiguouslythat a deep acceptor, Cd vacancy, behaves as a doubly charged acceptor, and the second ionization level is located at similar to Ev+(0.5 +/- 0.05) eV, i.e., relatively far from the midgap similar to 0.8 eV. This configuration may determin

Název v anglickém jazyce

Unique Deep Level in Spectroscopic CdZnTe: Compensation, Trapping, and Polarization

Popis výsledku anglicky

As yet, the role of the main native defects in the compensation, trapping, and polarization of x-ray and gamma-ray room-temperature detectors based on semi-insulated cadmium telluride (CdTe) and cadmium zinc telluride (CdZnTe) is indeterminate. To betterquantify it, we assessed the ionization energy, i.e., the binding energy for the hole of the second (2-/1-) acceptor level of Cd vacancies in Cd1-xZnxTe(x approximate to 0.1). We characterized the defects in several ways, including measuring the photoconductivity at below-bandgap excitation, and photoconductivity quenching by comparing their positions in the bandgap with that of the native energy-levels in CdTe quantum dots (QDs) and other II-VI semiconductors. In this way, we determined unambiguouslythat a deep acceptor, Cd vacancy, behaves as a doubly charged acceptor, and the second ionization level is located at similar to Ev+(0.5 +/- 0.05) eV, i.e., relatively far from the midgap similar to 0.8 eV. This configuration may determin

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP102%2F10%2F0148" target="_blank" >GAP102/10/0148: Vliv inkluzí Te na účinnost radiačních detektorů CdTe a CdZnTe</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

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Svazek periodika

59

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

6

Strana od-do

1531-1535

Kód UT WoS článku

000307893900009

EID výsledku v databázi Scopus

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