Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10126343" target="_blank" >RIV/00216208:11320/12:10126343 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.032" target="_blank" >http://dx.doi.org/10.1016/j.vacuum.2011.07.032</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.vacuum.2011.07.032" target="_blank" >10.1016/j.vacuum.2011.07.032</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Popis výsledku v původním jazyce

We compare structural and optical properties of Ge quantum dot lattices in amorphous silica matrix obtained by two recently published techniques for the preparation of regularly ordered quantum dot lattices in amorphous matrices. The first technique is self-ordering growth of (Ge + SiO2)/SiO2 multilayer at an elevated substrate temperature where diffusion and surface morphology effects drive the self-ordering. The second one is irradiation of (Ge + SiO2)/SiO2 multilayer by oxygen ions. The multilayer used for the irradiation is grown at room temperature in this case, resulting with no Ge clusters after the deposition process. The irradiation causes clustering of Ge and ordering of Ge quantum dots in the irradiation direction. We show that the size of the dots and their arrangement can be easily manipulated by the preparation parameters. The structural properties of the films prepared by these methods affect the quantum confinement of the charge carriers which is visible in the absorpti

Název v anglickém jazyce

Preparation of regularly ordered Ge quantum dot lattices in amorphous matrices

Popis výsledku anglicky

We compare structural and optical properties of Ge quantum dot lattices in amorphous silica matrix obtained by two recently published techniques for the preparation of regularly ordered quantum dot lattices in amorphous matrices. The first technique is self-ordering growth of (Ge + SiO2)/SiO2 multilayer at an elevated substrate temperature where diffusion and surface morphology effects drive the self-ordering. The second one is irradiation of (Ge + SiO2)/SiO2 multilayer by oxygen ions. The multilayer used for the irradiation is grown at room temperature in this case, resulting with no Ge clusters after the deposition process. The irradiation causes clustering of Ge and ordering of Ge quantum dots in the irradiation direction. We show that the size of the dots and their arrangement can be easily manipulated by the preparation parameters. The structural properties of the films prepared by these methods affect the quantum confinement of the charge carriers which is visible in the absorpti

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

—

Projekt

—

Návaznosti

Z - Vyzkumny zamer (s odkazem do CEZ)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Vacuum

ISSN

0042-207X

e-ISSN

—

Svazek periodika

86

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

4

Strana od-do

733-736

Kód UT WoS článku

000301018400037

EID výsledku v databázi Scopus

—