Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10140018" target="_blank" >RIV/00216208:11320/13:10140018 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S0021889813008182" target="_blank" >http://dx.doi.org/10.1107/S0021889813008182</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S0021889813008182" target="_blank" >10.1107/S0021889813008182</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Popis výsledku v původním jazyce

Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3 matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3 adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al(2)O(3)targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different direc

Název v anglickém jazyce

Growth of a three-dimensional anisotropic lattice of Ge quantum dots in an amorphous alumina matrix

Popis výsledku anglicky

Simple processes for the preparation of semiconductor quantum dot lattices embedded in dielectric amorphous matrices play an important role in various nanotechnology applications. Of particular interest are quantum dot lattices with properties that differ significantly in different directions parallel to the material surface. Here, a simple method is demonstrated for the fabrication of an anisotropic lattice of Ge quantum dots in an amorphous Al2O3 matrix by a self-assembly process. A specific deposition geometry with an oblique incidence of the Ge and Al2O3 adparticles was used during magnetron sputtering deposition to achieve the desired anisotropy. The observed Ge quantum dot ordering is explained by a combination of directional diffusion of adparticles from the Ge and Al(2)O(3)targets and a shadowing process which occurs during deposition as a result of the specific surface morphology. The prepared material shows a strong anisotropy of the electrical conductivity in different direc

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GAP204%2F11%2F0785" target="_blank" >GAP204/11/0785: Samouspořádaný růst a fázové transformace nanokrystalů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

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Svazek periodika

46

Číslo periodika v rámci svazku

March

Stát vydavatele periodika

DK - Dánské království

Počet stran výsledku

7

Strana od-do

709-715

Kód UT WoS článku

000318943300015

EID výsledku v databázi Scopus

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