RHEED study of the growth of cerium oxide on Cu(111)

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F12%3A10130895" target="_blank" >RIV/00216208:11320/12:10130895 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2012.06.014" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2012.06.014</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2012.06.014" target="_blank" >10.1016/j.apsusc.2012.06.014</a>

Jazyk výsledku

angličtina

Název v původním jazyce

RHEED study of the growth of cerium oxide on Cu(111)

Popis výsledku v původním jazyce

This article reports RHEED and XPS studies of the growth of epitaxial cerium oxide layers on (1 1 1) surface of copper single-crystal. The layers were prepared by reactive evaporation of cerium in 5 x 10(-5) Pa of oxygen at different substrate temperatures. Cerium oxide layers exhibited (1 1 1) crystallographic plane parallel to the substrate surface. The model of CeO2(1 1 1)/Cu(1 1 1) epitaxial system is proposed. Morphological parameters of cerium oxide layer were deduced from RHEED diffraction patterns. It was found that average island size increased with the substrate temperature during the deposition. The obtained results are in agreement with the similar studies performed by STM. An experimental arrangement of the RHEED technique permitted to measure an evolution of lattice parameter of cerium oxide during the growth. A contraction of crystal lattice was observed especially in early stages of the growth. XPS measurements indicated the growth of stoichiometric cerium oxide.

Název v anglickém jazyce

RHEED study of the growth of cerium oxide on Cu(111)

Popis výsledku anglicky

This article reports RHEED and XPS studies of the growth of epitaxial cerium oxide layers on (1 1 1) surface of copper single-crystal. The layers were prepared by reactive evaporation of cerium in 5 x 10(-5) Pa of oxygen at different substrate temperatures. Cerium oxide layers exhibited (1 1 1) crystallographic plane parallel to the substrate surface. The model of CeO2(1 1 1)/Cu(1 1 1) epitaxial system is proposed. Morphological parameters of cerium oxide layer were deduced from RHEED diffraction patterns. It was found that average island size increased with the substrate temperature during the deposition. The obtained results are in agreement with the similar studies performed by STM. An experimental arrangement of the RHEED technique permitted to measure an evolution of lattice parameter of cerium oxide during the growth. A contraction of crystal lattice was observed especially in early stages of the growth. XPS measurements indicated the growth of stoichiometric cerium oxide.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2012

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

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Svazek periodika

259

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

34-38

Kód UT WoS článku

000310436900006

EID výsledku v databázi Scopus

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