High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10143990" target="_blank" >RIV/00216208:11320/13:10143990 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.07.033" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2012.07.033</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2012.07.033" target="_blank" >10.1016/j.jcrysgro.2012.07.033</a>

Jazyk výsledku

angličtina

Název v původním jazyce

High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure

Popis výsledku v původním jazyce

High resolution X-ray coplanar (symmetric X-ray diffraction (SXRD) and asymmetric X-ray diffraction (ASXRD)) and non-coplanar diffraction (grazing incidence diffraction (GID)) have been used to investigate the quality of AlGaN epilayers with 20% Al content, grown on sapphire using SiNx interlayers. The measurement of reciprocal space maps (RSM) with higher orders of reflections of SXRD and ASXRD which is readily performed at the synchrotron with high resolution and intensity reveals the presence of several diffraction peaks originating from the occurrence of local differences in the lattice constants. Two distinguishable AlGaN phases having different crystalline parameters were clearly recognized from X-ray data and the corresponding densities of screwdislocations have been determined measured as function of the overgrowth thickness varying from 0.5 mu m to 3.5 mu m. The variation of the screw and edge type dislocation densities with the overgrowth thickness has been found to follow t

Název v anglickém jazyce

High resolution synchrotron X-ray studies of phase separation phenomena and the scaling law for the threading dislocation densities reduction in high quality AlGaN heterostructure

Popis výsledku anglicky

High resolution X-ray coplanar (symmetric X-ray diffraction (SXRD) and asymmetric X-ray diffraction (ASXRD)) and non-coplanar diffraction (grazing incidence diffraction (GID)) have been used to investigate the quality of AlGaN epilayers with 20% Al content, grown on sapphire using SiNx interlayers. The measurement of reciprocal space maps (RSM) with higher orders of reflections of SXRD and ASXRD which is readily performed at the synchrotron with high resolution and intensity reveals the presence of several diffraction peaks originating from the occurrence of local differences in the lattice constants. Two distinguishable AlGaN phases having different crystalline parameters were clearly recognized from X-ray data and the corresponding densities of screwdislocations have been determined measured as function of the overgrowth thickness varying from 0.5 mu m to 3.5 mu m. The variation of the screw and edge type dislocation densities with the overgrowth thickness has been found to follow t

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

—

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

370

Číslo periodika v rámci svazku

May

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

51-56

Kód UT WoS článku

000317271000012

EID výsledku v databázi Scopus

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