Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F00216208%3A11320%2F13%3A10133655" target="_blank" >RIV/00216208:11320/13:10133655 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1107/S0021889812043051" target="_blank" >http://dx.doi.org/10.1107/S0021889812043051</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1107/S0021889812043051" target="_blank" >10.1107/S0021889812043051</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

Popis výsledku v původním jazyce

High-resolution X-ray diffraction in coplanar and noncoplanar geometries has been used to investigate the influence of an SiNx nano-mask in the reduction of the threading dislocation (TD) density of high-quality AlGaN epitaxial layers grown on sapphire substrates. Our developed model, based on a Monte Carlo method, was applied to the simulation of the reciprocal-space maps of a two-layer system. Good agreement was found between the simulation and the experimental data, leading to an accurate determination of the dislocation densities as a function of the overgrowth layer thickness. The efficiency of the SiNx nano-mask was defined as the ratio of the TD densities in the AlGaN layers below and above the mask. A significant improvement in the AlGaN layerquality was achieved by increasing the overgrowth layer thickness, and a TD density reduction scaling law was established.

Název v anglickém jazyce

Study of threading dislocation density reduction in AlGaN epilayers by Monte Carlo simulation of high-resolution reciprocal-space maps of a two-layer system

Popis výsledku anglicky

High-resolution X-ray diffraction in coplanar and noncoplanar geometries has been used to investigate the influence of an SiNx nano-mask in the reduction of the threading dislocation (TD) density of high-quality AlGaN epitaxial layers grown on sapphire substrates. Our developed model, based on a Monte Carlo method, was applied to the simulation of the reciprocal-space maps of a two-layer system. Good agreement was found between the simulation and the experimental data, leading to an accurate determination of the dislocation densities as a function of the overgrowth layer thickness. The efficiency of the SiNx nano-mask was defined as the ratio of the TD densities in the AlGaN layers below and above the mask. A significant improvement in the AlGaN layerquality was achieved by increasing the overgrowth layer thickness, and a TD density reduction scaling law was established.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

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Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2013

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Crystallography

ISSN

0021-8898

e-ISSN

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Svazek periodika

46

Číslo periodika v rámci svazku

1

Stát vydavatele periodika

DK - Dánské království

Počet stran výsledku

8

Strana od-do

120-127

Kód UT WoS článku

000313658700015

EID výsledku v databázi Scopus

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