Improvement of GaN crystalline quality by SiNx layer grown by MOVPE

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00520842" target="_blank" >RIV/68378271:_____/19:00520842 - isvavai.cz</a>

Výsledek na webu

<a href="http://hdl.handle.net/11104/0305500" target="_blank" >http://hdl.handle.net/11104/0305500</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.3952/physics.v59i4.4134" target="_blank" >10.3952/physics.v59i4.4134</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Improvement of GaN crystalline quality by SiNx layer grown by MOVPE

Popis výsledku v původním jazyce

In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation.

Název v anglickém jazyce

Improvement of GaN crystalline quality by SiNx layer grown by MOVPE

Popis výsledku anglicky

In this work the mechanism which helps to reduce the dislocation density by deposition of a SiNx interlayer is discussed. It is shown that the dislocation reduction by SiNx interlayer deposition is influenced by dislocation density in the underlying GaN layers. The SiNx interlayer is very effective when the original dislocation density is high, while in the case of lower dislocation density the deposition of SiNx is not effective for crystal quality improvement. The most probable mechanism is the annihilation of bended neighbouring dislocations during the coalescence of 3D islands. The SiNx layer cannot serve as a barrier for dislocations, since it is probably dissolved during the following GaN growth and dissolved Si atoms are incorporated into the above-grown GaN layer which stimulates the 3D island formation.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Lithuanian Journal of Physics

ISSN

1648-8504

e-ISSN

—

Svazek periodika

59

Číslo periodika v rámci svazku

4

Stát vydavatele periodika

LT - Litevská republika

Počet stran výsledku

8

Strana od-do

179-186

Kód UT WoS článku

000505595100002

EID výsledku v databázi Scopus

2-s2.0-85078539856