Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F15%3A00450412" target="_blank" >RIV/68378271:_____/15:00450412 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.982" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.982</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.821-823.982" target="_blank" >10.4028/www.scientific.net/MSF.821-823.982</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface

Popis výsledku v původním jazyce

In this study we present the diamond deposition on AlGaN/GaN substrates focusing on the quality of the diamond/GaN interface. The growth of diamond films was performed using microwave chemical vapour deposition system in different gas mixtures: standardCH4/H2 (at low and high ratio of CH4 to H2) and addition of CO2 to CH4/H2 gas chemistry. The diamond films were grown directly on GaN films either without or with thin interlayer. As interlayer, 100 nm thick Si3N4 was used. Surprisingly, in the case of standard CH4/H2 gas mixture, no diamond film was observed on the GaN with SiNx interlayer, while adding of CO2 resulted in diamond film formation on both samples with and without SiNx interlayer. Moreover, adding of CO2 led to higher growth rate. The morphology of diamond films and the quality of the diamond/GaN interface was investigated from the cross-section images by SEM and the chemical character (i.e. sp3 versus sp2 carbon bonds) was measured by Raman spectroscopy.

Název v anglickém jazyce

Influence of diamond CVD growth conditions and interlayer material on diamond/GaN interface

Popis výsledku anglicky

In this study we present the diamond deposition on AlGaN/GaN substrates focusing on the quality of the diamond/GaN interface. The growth of diamond films was performed using microwave chemical vapour deposition system in different gas mixtures: standardCH4/H2 (at low and high ratio of CH4 to H2) and addition of CO2 to CH4/H2 gas chemistry. The diamond films were grown directly on GaN films either without or with thin interlayer. As interlayer, 100 nm thick Si3N4 was used. Surprisingly, in the case of standard CH4/H2 gas mixture, no diamond film was observed on the GaN with SiNx interlayer, while adding of CO2 resulted in diamond film formation on both samples with and without SiNx interlayer. Moreover, adding of CO2 led to higher growth rate. The morphology of diamond films and the quality of the diamond/GaN interface was investigated from the cross-section images by SEM and the chemical character (i.e. sp3 versus sp2 carbon bonds) was measured by Raman spectroscopy.

Druh

D - Stať ve sborníku

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GP14-16549P" target="_blank" >GP14-16549P: Ladění elektrických vlastností hybridních struktur diamantu a galium nitridu řízenou optimalizací vnitřních pnutí</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2015

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Silicon Carbide and Related Materials 2014

ISBN

978-3-03835-478-9

ISSN

1662-9752

e-ISSN

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Počet stran výsledku

4

Strana od-do

982-985

Název nakladatele

Trans Tech Publications

Místo vydání

Pfaffikon

Místo konání akce

Grenoble

Datum konání akce

21. 9. 2014

Typ akce podle státní příslušnosti

EUR - Evropská akce

Kód UT WoS článku

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