Selective area deposition of diamond films on AlGaN/GaN heterostructures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00438857" target="_blank" >RIV/68378271:_____/14:00438857 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1002/pssb.201451167" target="_blank" >http://dx.doi.org/10.1002/pssb.201451167</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1002/pssb.201451167" target="_blank" >10.1002/pssb.201451167</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Selective area deposition of diamond films on AlGaN/GaN heterostructures

Popis výsledku v původním jazyce

Here we present selective area diamond deposition on AlGaN/GaN layers focusing on the elimination of surface and metal contact damage (Ni, NiO, Ir,and IrO2) and suppressing the spontaneous nucleation of diamond. Metal contacts are important for further applications such as diamond-coated GaN based electronic devices. The growth of diamond films was performed by microwave chemical vapor deposition in different gas mixtures with the addition of CO2 or N2 to CH4/H2. Adding CO2 resulted in polycrystalline (PCD), while adding N2 led to the formation of nanocrystalline diamond film (NCD). The diamond deposition was carried out using selective area nucleation in a three-layer sandwich structure (polymer/seeding layer/polymer), which avoided damage to the electrode and GaN surfaces from ultrasonic seeding by diamond particles. No protective layer was used on the GaN surface before diamond deposition, i.e.,diamond films were grown directly on the AlGaN/GaN heterostructures.

Název v anglickém jazyce

Selective area deposition of diamond films on AlGaN/GaN heterostructures

Popis výsledku anglicky

Here we present selective area diamond deposition on AlGaN/GaN layers focusing on the elimination of surface and metal contact damage (Ni, NiO, Ir,and IrO2) and suppressing the spontaneous nucleation of diamond. Metal contacts are important for further applications such as diamond-coated GaN based electronic devices. The growth of diamond films was performed by microwave chemical vapor deposition in different gas mixtures with the addition of CO2 or N2 to CH4/H2. Adding CO2 resulted in polycrystalline (PCD), while adding N2 led to the formation of nanocrystalline diamond film (NCD). The diamond deposition was carried out using selective area nucleation in a three-layer sandwich structure (polymer/seeding layer/polymer), which avoided damage to the electrode and GaN surfaces from ultrasonic seeding by diamond particles. No protective layer was used on the GaN surface before diamond deposition, i.e.,diamond films were grown directly on the AlGaN/GaN heterostructures.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/GP14-16549P" target="_blank" >GP14-16549P: Ladění elektrických vlastností hybridních struktur diamantu a galium nitridu řízenou optimalizací vnitřních pnutí</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Physica Status Solidi B-Basic Solid State Physics

ISSN

0370-1972

e-ISSN

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Svazek periodika

250

Číslo periodika v rámci svazku

12

Stát vydavatele periodika

DE - Spolková republika Německo

Počet stran výsledku

7

Strana od-do

2574-2580

Kód UT WoS článku

000345830900042

EID výsledku v databázi Scopus

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