Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F21%3A00541992" target="_blank" >RIV/68081723:_____/21:00541992 - isvavai.cz</a>

Výsledek na webu

<a href="https://aip.scitation.org/doi/10.1063/5.0036366" target="_blank" >https://aip.scitation.org/doi/10.1063/5.0036366</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/5.0036366" target="_blank" >10.1063/5.0036366</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Popis výsledku v původním jazyce

The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.

Název v anglickém jazyce

Defect structures in (001) zincblende GaN/3C-SiC nucleation layers

Popis výsledku anglicky

The defect structure of zincblende GaN nucleation layers grown by metalorganic vapor-phase epitaxy on 3C-SiC/Si (001) was investigated by high-resolution scanning transmission electron microscopy. Perfect dislocations, partial dislocations, and stacking faults are present in the layers. Perfect dislocations are identified as 60° mixed-type and act as misfit dislocations to relieve the compressive lattice mismatch strain in GaN. Stacking faults are mainly bounded by 30° Shockley partial dislocations and rarely by Lomer–Cottrell partial dislocations, both of which are able to relieve the compressive lattice mismatch strain in the layer. We propose that the stacking faults and their partial dislocations originate from the dissociation of perfect dislocations present in the zincblende GaN layer and by direct nucleation of partial dislocations loops from the surface. These are the two main mechanisms that lead to the final defect structure of the zincblende GaN nucleation layers.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/EF16_027%2F0008056" target="_blank" >EF16_027/0008056: Mezinárodní mobilita juniorských výzkumných pracovníků ÚFM</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

1089-7550

Svazek periodika

129

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

11

Strana od-do

155306

Kód UT WoS článku

000641873500002

EID výsledku v databázi Scopus

2-s2.0-85104562025