Nucleation of threading dislocations in atomistic simulations of strained layer epitaxy of III-nitrides

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F24%3A00579395" target="_blank" >RIV/68081723:_____/24:00579395 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S1359645423008996?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S1359645423008996?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.actamat.2023.119570" target="_blank" >10.1016/j.actamat.2023.119570</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Nucleation of threading dislocations in atomistic simulations of strained layer epitaxy of III-nitrides

Popis výsledku v původním jazyce

The early stage of heteroepitaxial growth of wurtzite III-nitrides on lattice-mismatched substrates producesnepitaxial strain that is relieved by nucleating a network of misfit dislocations. However, these epilayers containnalso a large density of threading dislocations that are nearly perpendicular to the interface, despite the factnthat they do not relieve the epitaxial strain. To shed light onto the mechanism of nucleation of threadingndislocations, we employ atomistic simulations to explore the heteroepitaxy between a GaN nanoisland and anrigid substrate whose lattice parameter is adjusted to produce the desired misfit. We observe that the ends ofnmisfit dislocations experience large image forces that pull them toward the pyramidal facets of the nanoisland.nThis results in bending of the terminating ends of misfit dislocations which constitute segments of threadingndislocations. The spacing of these threading dislocations would increase (and thus their density decrease) ifnthe epitaxial growth could be manipulated such that the film was deposited in a layer-by-layer fashion.n

Název v anglickém jazyce

Nucleation of threading dislocations in atomistic simulations of strained layer epitaxy of III-nitrides

Popis výsledku anglicky

The early stage of heteroepitaxial growth of wurtzite III-nitrides on lattice-mismatched substrates producesnepitaxial strain that is relieved by nucleating a network of misfit dislocations. However, these epilayers containnalso a large density of threading dislocations that are nearly perpendicular to the interface, despite the factnthat they do not relieve the epitaxial strain. To shed light onto the mechanism of nucleation of threadingndislocations, we employ atomistic simulations to explore the heteroepitaxy between a GaN nanoisland and anrigid substrate whose lattice parameter is adjusted to produce the desired misfit. We observe that the ends ofnmisfit dislocations experience large image forces that pull them toward the pyramidal facets of the nanoisland.nThis results in bending of the terminating ends of misfit dislocations which constitute segments of threadingndislocations. The spacing of these threading dislocations would increase (and thus their density decrease) ifnthe epitaxial growth could be manipulated such that the film was deposited in a layer-by-layer fashion.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/FW01010183" target="_blank" >FW01010183: Nová generace integrace mikroskopie atomárních sil a elektronové mikroskopie</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2024

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Acta Materialia

ISSN

1359-6454

e-ISSN

1873-2453

Svazek periodika

264

Číslo periodika v rámci svazku

Jan

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

6

Strana od-do

119570

Kód UT WoS článku

001140132900001

EID výsledku v databázi Scopus

2-s2.0-85179587852