Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F14%3A00431319" target="_blank" >RIV/68378271:_____/14:00431319 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/67985882:_____/14:00431319

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.117" target="_blank" >http://dx.doi.org/10.1016/j.apsusc.2014.02.117</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.apsusc.2014.02.117" target="_blank" >10.1016/j.apsusc.2014.02.117</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Popis výsledku v původním jazyce

Elastic accommodation of heteroepitaxial layers beyond their critical thickness is crucial for the reduction of misfit dislocations. In this work, pore networks were introduced electrochemically in GaAs substrates in order to modify their mechanical responses. InxGa1xAs epilayers with nominal indium contents up to x = 0.20 were then deposited by MOVPE, and were compared to similar epilayers grown on nonporous GaAs. Strain relaxation and defect introduction were studied by TEM observations, x-ray diffraction, and photoluminescence measurements. It was found that the porous substrates acted to reduce the density of misfit dislocations, thereby increasing the epilayer critical thickness. The InGaAs epilayers retained a significantly higher amount of elastic strain compared to ones grown on nonporous GaAs. The onset of plasticity was mediated by the pores, which acted as nucleation sites for 60° dislocations that glided toward the interface.

Název v anglickém jazyce

Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates

Popis výsledku anglicky

Elastic accommodation of heteroepitaxial layers beyond their critical thickness is crucial for the reduction of misfit dislocations. In this work, pore networks were introduced electrochemically in GaAs substrates in order to modify their mechanical responses. InxGa1xAs epilayers with nominal indium contents up to x = 0.20 were then deposited by MOVPE, and were compared to similar epilayers grown on nonporous GaAs. Strain relaxation and defect introduction were studied by TEM observations, x-ray diffraction, and photoluminescence measurements. It was found that the porous substrates acted to reduce the density of misfit dislocations, thereby increasing the epilayer critical thickness. The InGaAs epilayers retained a significantly higher amount of elastic strain compared to ones grown on nonporous GaAs. The onset of plasticity was mediated by the pores, which acted as nucleation sites for 60° dislocations that glided toward the interface.

Druh

J_x - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)

CEP obor

BM - Fyzika pevných látek a magnetismus

OECD FORD obor

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Projekt

<a href="/cs/project/7AMB12GR034" target="_blank" >7AMB12GR034: Heterostruktury a nanostruktury polovodičů III-V pro nové elektronické a fotonické aplikace</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2014

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Applied Surface Science

ISSN

0169-4332

e-ISSN

—

Svazek periodika

306

Číslo periodika v rámci svazku

Jul

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

5

Strana od-do

89-93

Kód UT WoS článku

000336591500017

EID výsledku v databázi Scopus

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