Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68081723%3A_____%2F19%3A00509851" target="_blank" >RIV/68081723:_____/19:00509851 - isvavai.cz</a>

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2019.125167" target="_blank" >10.1016/j.jcrysgro.2019.125167</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Popis výsledku v původním jazyce

Cubic zincblende (zb-)GaN nucleation layers (NLs) grown by MOVPE on 3C-SiC/Si substrates were studied to determine their optimal thickness for subsequent zb-GaN epilayer growth. The layers were characterised by atomic force microscopy, X-ray diffraction and scanning transmission electron microscopy. The as-grown NLs, with nominal thicknesses varying from 3nm to 44nm, consist of small grains which are elongated in the [1−10] direction, and cover the underlying SiC surface almost entirely. Thermal annealing of the NLs by heating in a H2/NH3 atmosphere to the elevated epilayer growth temperature reduces the substrate coverage of the films that are less than 22nm thick, due to both material desorption and the ripening of islands. The compressive biaxial in-plane strain of the NLs reduces with increasing NL thickness to the value of relaxed GaN for a thickness of 44nm. Both the as-grown and annealed NLs are crystalline and have high zincblende phase purity, but contain defects including misfit dislocations and stacking faults. The zb-GaN epilayers grown on the thinnest NLs show an enhanced fraction of the wurtzite phase, most likely formed by nucleation on the exposed substrate surface at elevated temperature, thus dictating the minimum NL thickness for phase-pure zb-GaN epilayer growth.n

Název v anglickém jazyce

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Popis výsledku anglicky

Cubic zincblende (zb-)GaN nucleation layers (NLs) grown by MOVPE on 3C-SiC/Si substrates were studied to determine their optimal thickness for subsequent zb-GaN epilayer growth. The layers were characterised by atomic force microscopy, X-ray diffraction and scanning transmission electron microscopy. The as-grown NLs, with nominal thicknesses varying from 3nm to 44nm, consist of small grains which are elongated in the [1−10] direction, and cover the underlying SiC surface almost entirely. Thermal annealing of the NLs by heating in a H2/NH3 atmosphere to the elevated epilayer growth temperature reduces the substrate coverage of the films that are less than 22nm thick, due to both material desorption and the ripening of islands. The compressive biaxial in-plane strain of the NLs reduces with increasing NL thickness to the value of relaxed GaN for a thickness of 44nm. Both the as-grown and annealed NLs are crystalline and have high zincblende phase purity, but contain defects including misfit dislocations and stacking faults. The zb-GaN epilayers grown on the thinnest NLs show an enhanced fraction of the wurtzite phase, most likely formed by nucleation on the exposed substrate surface at elevated temperature, thus dictating the minimum NL thickness for phase-pure zb-GaN epilayer growth.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20201 - Electrical and electronic engineering

Projekt

<a href="/cs/project/EF16_027%2F0008056" target="_blank" >EF16_027/0008056: Mezinárodní mobilita juniorských výzkumných pracovníků ÚFM</a><br>

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

524

Číslo periodika v rámci svazku

OCT

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

8

Strana od-do

125167

Kód UT WoS článku

000480523700011

EID výsledku v databázi Scopus

2-s2.0-85073701641