Overview of GaN devices and transport properties of AlGaN/GaN HEMT structures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00605247" target="_blank" >RIV/68378271:_____/23:00605247 - isvavai.cz</a>

Výsledek na webu

<a href="https://kis.cvt.stuba.sk/arl-stu/en/detail-stu_us_cat-0106937-21st-Conference-of-Czech-and-Slovak-Physicists/?iset=1" target="_blank" >https://kis.cvt.stuba.sk/arl-stu/en/detail-stu_us_cat-0106937-21st-Conference-of-Czech-and-Slovak-Physicists/?iset=1</a>

DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Overview of GaN devices and transport properties of AlGaN/GaN HEMT structures

Popis výsledku v původním jazyce

All our results support our expectation that a suitably designed AlGaN back barrier can improve HEMT parameters. The best results were for an AlxGa1-xN BB, with x in the range of 0.07-0.15, Back Barrier thickness of 17 nm and a GaN channel layer thickness > 140 nm. For structures prepared on HDD buffer, parallel currents through deeper parts of the heterostructure were not detected. We did not observe strong influence of BB parameters on transport properties of samples prepared on HDD templates. Our results suggest that reduction of dislocation density increases electron mobility in 2DEG, which is beneficial for GaN HEMT HF applications. Since scattering on dislocations was excluded as a significant scattering mechanism in 2DEG, other mechanisms, such as scattering on ionized impurities surrounding dislocations or the influence of the interface morphology, may be responsible for lowering the electron mobility in structures with a high dislocation density.

Název v anglickém jazyce

Overview of GaN devices and transport properties of AlGaN/GaN HEMT structures

Popis výsledku anglicky

All our results support our expectation that a suitably designed AlGaN back barrier can improve HEMT parameters. The best results were for an AlxGa1-xN BB, with x in the range of 0.07-0.15, Back Barrier thickness of 17 nm and a GaN channel layer thickness > 140 nm. For structures prepared on HDD buffer, parallel currents through deeper parts of the heterostructure were not detected. We did not observe strong influence of BB parameters on transport properties of samples prepared on HDD templates. Our results suggest that reduction of dislocation density increases electron mobility in 2DEG, which is beneficial for GaN HEMT HF applications. Since scattering on dislocations was excluded as a significant scattering mechanism in 2DEG, other mechanisms, such as scattering on ionized impurities surrounding dislocations or the influence of the interface morphology, may be responsible for lowering the electron mobility in structures with a high dislocation density.

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů