Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F21%3A00543533" target="_blank" >RIV/68378271:_____/21:00543533 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/21:00353799

Výsledek na webu

<a href="http://hdl.handle.net/11104/0320728" target="_blank" >http://hdl.handle.net/11104/0320728</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1088/1361-6641/abfe9b" target="_blank" >10.1088/1361-6641/abfe9b</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Popis výsledku v původním jazyce

The influence of dislocation density on the transport properties of HEMT structures is reported. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities (DD), are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower DD. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath 2DEG channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different DD was possible. We show that DD lowering considerably increases the electron mobility in 2DEG. DD also has a significant influence on the Fermi level position in GaN. Reduction of DD can improve the performance of high-frequency GaN HEMT applications.n

Název v anglickém jazyce

Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design

Popis výsledku anglicky

The influence of dislocation density on the transport properties of HEMT structures is reported. Experimental results, obtained on HEMT structures prepared in the same growth run on templates with different dislocation densities (DD), are compared. However, the direct comparison of structures is complicated, since parallel parasitic currents through deeper parts of the heterostructure were observed in samples with lower DD. To suppress this phenomenon, the addition of an AlGaN back barrier (BB) beneath 2DEG channel is proposed and optimized and the most suitable design based on both modeling and experimental results is suggested. Subsequently, the comparison of electron mobility in 2DEG for structures with AlGaN BB and different DD was possible. We show that DD lowering considerably increases the electron mobility in 2DEG. DD also has a significant influence on the Fermi level position in GaN. Reduction of DD can improve the performance of high-frequency GaN HEMT applications.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2021

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Semiconductor Science and Technology

ISSN

0268-1242

e-ISSN

1361-6641

Svazek periodika

36

Číslo periodika v rámci svazku

7

Stát vydavatele periodika

GB - Spojené království Velké Británie a Severního Irska

Počet stran výsledku

9

Strana od-do

075016

Kód UT WoS článku

000661636300001

EID výsledku v databázi Scopus

2-s2.0-85109215033