Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00572001" target="_blank" >RIV/68378271:_____/23:00572001 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/00216208:11320/23:10468618 RIV/68407700:21340/23:00367012

Výsledek na webu

<a href="https://hdl.handle.net/11104/0342845" target="_blank" >https://hdl.handle.net/11104/0342845</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1021/acsami.3c00799" target="_blank" >10.1021/acsami.3c00799</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface

Popis výsledku v původním jazyce

This work suggest new morphology for AlGaN/GaN interface which enhances electron mobility in 2D electron gas (2DEG) of HEMT structures. The widely used technology for preparation of GaN channel in AlGaN/GaN HEMT transistors is the growth at high temperature around 1000°C in hydrogen atmosphere. The main reason for these conditions is the aim to prepare atomically flat epitaxial surface for AlGaN/GaN interface and to achieve layer with the lowest possible carbon concentration. In this work we show, that smooth AlGaN/GaN interface is not necessary for high electron mobility in 2DEG. Surprisingly, when the high temperature GaN channel layer is replaced by the layer grown at temperature 870°C in nitrogen using TEGa as a precursor, the electron Hall mobility increases significantly. This unexpected behavior can be explained by a spatial separation of electrons by V-pits from the regions surrounding dislocation which contain increased concentration of point defects and impurities.

Název v anglickém jazyce

Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface

Popis výsledku anglicky

This work suggest new morphology for AlGaN/GaN interface which enhances electron mobility in 2D electron gas (2DEG) of HEMT structures. The widely used technology for preparation of GaN channel in AlGaN/GaN HEMT transistors is the growth at high temperature around 1000°C in hydrogen atmosphere. The main reason for these conditions is the aim to prepare atomically flat epitaxial surface for AlGaN/GaN interface and to achieve layer with the lowest possible carbon concentration. In this work we show, that smooth AlGaN/GaN interface is not necessary for high electron mobility in 2DEG. Surprisingly, when the high temperature GaN channel layer is replaced by the layer grown at temperature 870°C in nitrogen using TEGa as a precursor, the electron Hall mobility increases significantly. This unexpected behavior can be explained by a spatial separation of electrons by V-pits from the regions surrounding dislocation which contain increased concentration of point defects and impurities.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

ACS Applied Materials and Interfaces

ISSN

1944-8244

e-ISSN

1944-8252

Svazek periodika

15

Číslo periodika v rámci svazku

15

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

7

Strana od-do

19646-19652

Kód UT WoS článku

000973182800001

EID výsledku v databázi Scopus

2-s2.0-85152210227