Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F23%3A00569330" target="_blank" >RIV/68378271:_____/23:00569330 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/23:00367043

Výsledek na webu

<a href="https://doi.org/10.1016/j.jcrysgro.2022.127061" target="_blank" >https://doi.org/10.1016/j.jcrysgro.2022.127061</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2022.127061" target="_blank" >10.1016/j.jcrysgro.2022.127061</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Popis výsledku v původním jazyce

Although a lot of attention was devoted to different aspects of GaN HEMT structure such as buffer layer architecture, AlGaN barrier, surface passivation and dielectric choice, not much attention was paid to optimize the technology of GaN channel. We show in this work that by optimizing the channel technology the electron mobility can be significantly improved. We have studied the influence of technological parameters on transport properties on the series of GaN layers resembling a HEMT channel. We pay most attention to the layer growth using TEG precursor. The examined parameters were type of reactor atmosphere, growth temperature, growth rate influenced by precursor concentration and reactor pressure. Using optimized parameters for growth of a HEMT structure, we have succeeded in increasing the electron mobility in 2DEG by 30 %.

Název v anglickém jazyce

Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters

Popis výsledku anglicky

Although a lot of attention was devoted to different aspects of GaN HEMT structure such as buffer layer architecture, AlGaN barrier, surface passivation and dielectric choice, not much attention was paid to optimize the technology of GaN channel. We show in this work that by optimizing the channel technology the electron mobility can be significantly improved. We have studied the influence of technological parameters on transport properties on the series of GaN layers resembling a HEMT channel. We pay most attention to the layer growth using TEG precursor. The examined parameters were type of reactor atmosphere, growth temperature, growth rate influenced by precursor concentration and reactor pressure. Using optimized parameters for growth of a HEMT structure, we have succeeded in increasing the electron mobility in 2DEG by 30 %.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2023

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

1873-5002

Svazek periodika

605

Číslo periodika v rámci svazku

March

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

7

Strana od-do

127061

Kód UT WoS článku

000918695000001

EID výsledku v databázi Scopus

2-s2.0-85145252163