Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00502838" target="_blank" >RIV/68378271:_____/19:00502838 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.11.038" target="_blank" >10.1016/j.jcrysgro.2018.11.038</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

Popis výsledku v původním jazyce

This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier epitaxy is used. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS and HRTEM results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without eterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.n

Název v anglickém jazyce

Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface

Popis výsledku anglicky

This work concentrates on the technology procedure for growth of upper QW interfaces in InGaN/GaN QW structure when different temperature for QW and barrier epitaxy is used. We have found that optimal PL results were achieved, when the growth after QW formation was not interrupted, but immediately continued during the temperature ramp by the growth of (In)GaN capping layer with small introduction of In precursor into the reactor. Optimal barrier between QW with respect to PL results was found to be pure GaN. We have shown according to SIMS and HRTEM results that by this technological procedure the InGaN desorption was considerably suppressed and three times higher In concentration and two times thicker QWs were achieved for the same QW growth parameters without eterioration of PL intensity in comparison to sample with usually used thin GaN low temperature capping protection.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

507

Číslo periodika v rámci svazku

Feb

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

310-315

Kód UT WoS článku

000455667500051

EID výsledku v databázi Scopus

2-s2.0-85057811376