Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers

Popis výsledku v původním jazyce

In our work we will show how to significantly increase the In content in QWs without lowering the QW growth temperature. We have studied different growth modes of InGaN/(In)GaN heterostructure while the QW growth parameters (temperature, pressure, flow, etc.) were kept constant. We have only changed parameters during the temperature rise to the barrier growth and parameters during the barrier growth. We have introduced a small TMIn flow immediately after the QW growth and observed not only increased concentration of In in the structure (in both, QW and barrier) but also strong increase of the growth rate (confirmed by SIMS and XRD measurements). We explain this phenomenon by suppression of In desorption during the initial phase of the barrier growth. Photoluminescence spectra of samples with different combinations of (In)GaN QW capping and (In)GaN barriers will be shown and discussed. Luminescent homogeneity of these samples was characterized by PL intensity maps.nn

Název v anglickém jazyce

Influence of Different InGaN/(In)GaN Growth Modes on Indium Incorporation and Quality of Layers

Popis výsledku anglicky

In our work we will show how to significantly increase the In content in QWs without lowering the QW growth temperature. We have studied different growth modes of InGaN/(In)GaN heterostructure while the QW growth parameters (temperature, pressure, flow, etc.) were kept constant. We have only changed parameters during the temperature rise to the barrier growth and parameters during the barrier growth. We have introduced a small TMIn flow immediately after the QW growth and observed not only increased concentration of In in the structure (in both, QW and barrier) but also strong increase of the growth rate (confirmed by SIMS and XRD measurements). We explain this phenomenon by suppression of In desorption during the initial phase of the barrier growth. Photoluminescence spectra of samples with different combinations of (In)GaN QW capping and (In)GaN barriers will be shown and discussed. Luminescent homogeneity of these samples was characterized by PL intensity maps.nn

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů