Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F18%3A00496195" target="_blank" >RIV/68378271:_____/18:00496195 - isvavai.cz</a>

Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

Popis výsledku v původním jazyce

In our laboratory we prepare InGaN/GaN quantum wells (QWs) that should be used in scintillating structures with fast and strong luminescence response with short decay time. Unfortunately, in the photoluminescence (PL) spectrum there is also a slow broad defect band at around 470 nm besides the excitonic peak at around 420 nm. We assume that the main defect band contribution comes from the five lowest QWs that face the transition from higher growth temperature of GaN buffer to the lower growth temperature of InGaN QWs. SIMS data of selected samples prove the contamination under the lowest QWs and show that some elements are contaminating not only a thin region beneath QWs, but also the QWs themselves. We expect that the contamination is due to lowering the temperature which is a well-known phenomenon and thus we introduce a low temperature (LT) buffer under QWs. From PL spectra we can see that the sample with LT buffer has more intense excitonic peak and partly suppressed defect band.n

Název v anglickém jazyce

Use of Low Temperature Buffer Layer to Suppress the Contamination of InGaN/GaN Quantum Wells

Popis výsledku anglicky

In our laboratory we prepare InGaN/GaN quantum wells (QWs) that should be used in scintillating structures with fast and strong luminescence response with short decay time. Unfortunately, in the photoluminescence (PL) spectrum there is also a slow broad defect band at around 470 nm besides the excitonic peak at around 420 nm. We assume that the main defect band contribution comes from the five lowest QWs that face the transition from higher growth temperature of GaN buffer to the lower growth temperature of InGaN QWs. SIMS data of selected samples prove the contamination under the lowest QWs and show that some elements are contaminating not only a thin region beneath QWs, but also the QWs themselves. We expect that the contamination is due to lowering the temperature which is a well-known phenomenon and thus we introduce a low temperature (LT) buffer under QWs. From PL spectra we can see that the sample with LT buffer has more intense excitonic peak and partly suppressed defect band.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

<a href="/cs/project/LO1603" target="_blank" >LO1603: Centrum technologie a pokročilé strukturní analýzy aplikačně významných materiálů</a><br>

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů