Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F19%3A00502822" target="_blank" >RIV/68378271:_____/19:00502822 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.10.013" target="_blank" >http://dx.doi.org/10.1016/j.jcrysgro.2018.10.013</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2018.10.013" target="_blank" >10.1016/j.jcrysgro.2018.10.013</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

Popis výsledku v původním jazyce

In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum well (MQW) active region was prepared and studied by PL, SIMS and AFM and structure band alignments were simulated. We show that the dominant influence of Si doping is in modification of the tilt of the band structure. A probable origin of the defect band luminescence and its high sensitivity to the band structure tilting is explained. Proper Si doping position for particular applications is suggested. In the case of LED structures, the n-type buffer layer and p-type capping layer help improve the emission efficiency. In the case of an InGaN/GaN MQW structure designed for scintillators, the n-type doping immediately under the MQW region is not required, since it strongly increases the QW defect band luminescence which becomes dominant in the spectrum.n

Název v anglickém jazyce

Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties

Popis výsledku anglicky

In this work, the influence of Si doping position on the photoluminescence (PL) properties of InGaN/GaN quantum wells (QWs) is studied. A set of samples with different positions of Si doping with respect to the multi quantum well (MQW) active region was prepared and studied by PL, SIMS and AFM and structure band alignments were simulated. We show that the dominant influence of Si doping is in modification of the tilt of the band structure. A probable origin of the defect band luminescence and its high sensitivity to the band structure tilting is explained. Proper Si doping position for particular applications is suggested. In the case of LED structures, the n-type buffer layer and p-type capping layer help improve the emission efficiency. In the case of an InGaN/GaN MQW structure designed for scintillators, the n-type doping immediately under the MQW region is not required, since it strongly increases the QW defect band luminescence which becomes dominant in the spectrum.n

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2019

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

506

Číslo periodika v rámci svazku

Jan

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

8-13

Kód UT WoS článku

000449709600002

EID výsledku v databázi Scopus

2-s2.0-85054722446