A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F46747885%3A24220%2F20%3A00010354" target="_blank" >RIV/46747885:24220/20:00010354 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68378271:_____/20:00532847 RIV/68407700:21340/20:00345113 RIV/00216208:11320/20:10423669

Výsledek na webu

<a href="https://www.sciencedirect.com/science/article/pii/S0022024820301020?via=ihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S0022024820301020?via=ihub</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.jcrysgro.2020.125579" target="_blank" >10.1016/j.jcrysgro.2020.125579</a>

Jazyk výsledku

angličtina

Název v původním jazyce

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Popis výsledku v původním jazyce

This work suggests new alternative explanation why a single InGaN quantum well (QW) or the deepest QWs in the multiple quantum well (MQW) structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of gallium originate dominantly in GaN buffer layers grown at higher temperatures in H-2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of gallium vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them. Understanding the mechanism why the luminescence efficiency is suppressed in deeper QWs may be very important for LED community and can help to develop new improved technologies for the growth of InGaN/GaN MQW active region.

Název v anglickém jazyce

A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures

Popis výsledku anglicky

This work suggests new alternative explanation why a single InGaN quantum well (QW) or the deepest QWs in the multiple quantum well (MQW) structures suffer with a high non-radiative recombination rate. According to SIMS results, positron annihilation spectroscopy and photoluminescence measurements we suggest that vacancy of Ga in complex with hydrogen atoms can play a dominant role in non-radiative Shockley-Read-Hall recombination of the deepest QWs in InGaN/GaN MQW structures. Vacancy of gallium originate dominantly in GaN buffer layers grown at higher temperatures in H-2 atmosphere and are transported to the InGaN/GaN MQW region by diffusion, where they are very effectively trapped in InGaN layers and form complex defects with hydrogen atoms during epitaxy of InGaN layers. Trapping of gallium vacancies is another suggested mechanism explaining why the widely used In containing prelayers help to increase the luminescence efficiency of the InGaN/GaN MQW active region grown above them. Understanding the mechanism why the luminescence efficiency is suppressed in deeper QWs may be very important for LED community and can help to develop new improved technologies for the growth of InGaN/GaN MQW active region.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

20500 - Materials engineering

Projekt

—

Návaznosti

S - Specificky vyzkum na vysokych skolach

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Crystal Growth

ISSN

0022-0248

e-ISSN

—

Svazek periodika

536

Číslo periodika v rámci svazku

APR

Stát vydavatele periodika

NL - Nizozemsko

Počet stran výsledku

6

Strana od-do

—

Kód UT WoS článku

000520838100001

EID výsledku v databázi Scopus

2-s2.0-85080922153