Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure

Kód výsledku v IS VaVaI

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Výsledek na webu

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DOI - Digital Object Identifier

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Jazyk výsledku

angličtina

Název v původním jazyce

Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure

Popis výsledku v původním jazyce

Luminescence properties of InGaN/GaN multiple quantum wells (MQWs) are influenced by internal spontaneous and piezoelectric fields. These can be at least partially suppressed by doping with shallow impurities. This work shows impact of Si doping in different layers of MQWs on photoluminescence and cathodoluminescence of InGaN/GaN MQWs. To explain observed trends, band structure is also simulated. From our results emerges demand for Si doping at least under MQW area to obtain higher luminescence intensities. On the other hand, such doping also enhances unwanted defect luminescence which is detrimental for using InGaN MQWs as scintillation material.n

Název v anglickém jazyce

Impact of Si doping in different GaN layers on luminescence properties of InGaN/GaN multiple quantum well structure

Popis výsledku anglicky

Luminescence properties of InGaN/GaN multiple quantum wells (MQWs) are influenced by internal spontaneous and piezoelectric fields. These can be at least partially suppressed by doping with shallow impurities. This work shows impact of Si doping in different layers of MQWs on photoluminescence and cathodoluminescence of InGaN/GaN MQWs. To explain observed trends, band structure is also simulated. From our results emerges demand for Si doping at least under MQW area to obtain higher luminescence intensities. On the other hand, such doping also enhances unwanted defect luminescence which is detrimental for using InGaN MQWs as scintillation material.n

Druh

O - Ostatní výsledky

CEP obor

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OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2018

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů