Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F20%3A00536309" target="_blank" >RIV/68378271:_____/20:00536309 - isvavai.cz</a>

Nalezeny alternativní kódy

RIV/68407700:21340/20:00345115

Výsledek na webu

<a href="https://doi.org/10.1109/TNS.2020.2985666" target="_blank" >https://doi.org/10.1109/TNS.2020.2985666</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/TNS.2020.2985666" target="_blank" >10.1109/TNS.2020.2985666</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates

Popis výsledku v původním jazyce

A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images, and their optical properties, including photoluminescence (PL) excitation, PL emission spectra, and PL decay curves, were measured by means of time-resolved luminescence spectroscopy. The obtained spectral features were tentatively explained by using the band scheme, which is commonly used for the description of InGaN/GaN multiple QW (MQW) structures. The application potential in the field of nanoscintillators used for fast timing of studied structures is discussed as well.

Název v anglickém jazyce

Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates

Popis výsledku anglicky

A set of samples based on InGaN/GaN multiple quantum well (QW) structures with an extremely thick active region and high QW numbers was prepared on different substrates by metal organic vapor phase epitaxy. Their morphology was studied by SEM images, and their optical properties, including photoluminescence (PL) excitation, PL emission spectra, and PL decay curves, were measured by means of time-resolved luminescence spectroscopy. The obtained spectral features were tentatively explained by using the band scheme, which is commonly used for the description of InGaN/GaN multiple QW (MQW) structures. The application potential in the field of nanoscintillators used for fast timing of studied structures is discussed as well.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Rok uplatnění

2020

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

IEEE Transactions on Nuclear Science

ISSN

0018-9499

e-ISSN

—

Svazek periodika

67

Číslo periodika v rámci svazku

6

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

4

Strana od-do

974-977

Kód UT WoS článku

000545005000019

EID výsledku v databázi Scopus

2-s2.0-85087155542