On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00476198" target="_blank" >RIV/68378271:_____/17:00476198 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1063/1.4984908" target="_blank" >http://dx.doi.org/10.1063/1.4984908</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1063/1.4984908" target="_blank" >10.1063/1.4984908</a>

Jazyk výsledku

angličtina

Název v původním jazyce

On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

Popis výsledku v původním jazyce

We compare the luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. The photoluminescence and cathodoluminescence characteristics are compared and discussed.

Název v anglickém jazyce

On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure

Popis výsledku anglicky

We compare the luminescence results obtained on InGaN/GaN multiple quantum well (QW) structures with different numbers of QWs. Structures are designed for scintillating applications, where large QW number covering particle penetration depth is necessary, and fast luminescence response is required. Special attention is devoted to increase the intensity of fast excitonic QW emission and to decrease the luminescence of the QW defect band, which has slower luminescence response and is undesired for fast scintillator applications. We found that increasing the In content in QWs suppresses the defect band luminescence and decreasing the QW growth rate increases the photoluminescence (PL) intensity of excitonic luminescence. We also show that increasing the number of InGaN further improves the PL properties of InGaN QWs. The photoluminescence and cathodoluminescence characteristics are compared and discussed.

Druh

J_imp - Článek v periodiku v databázi Web of Science

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název periodika

Journal of Applied Physics

ISSN

0021-8979

e-ISSN

—

Svazek periodika

121

Číslo periodika v rámci svazku

21

Stát vydavatele periodika

US - Spojené státy americké

Počet stran výsledku

8

Strana od-do

1-8

Kód UT WoS článku

000402768900021

EID výsledku v databázi Scopus

2-s2.0-85020427158