Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Kód výsledku v IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68378271%3A_____%2F17%3A00477154" target="_blank" >RIV/68378271:_____/17:00477154 - isvavai.cz</a>

Výsledek na webu

<a href="http://dx.doi.org/10.1117/12.2244786" target="_blank" >http://dx.doi.org/10.1117/12.2244786</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2244786" target="_blank" >10.1117/12.2244786</a>

Jazyk výsledku

angličtina

Název v původním jazyce

Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Popis výsledku v původním jazyce

InGaN/GaN multiple QW structures were prepared by MOVPE and characterized by high resolution X-ray diffraction. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source. The photo-, radio- and cathodo-luminescence were measured. We observed double peak luminescence governed by different recombination mechanisms: exciton in QW and related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased from 16 ns to 4 ns when the QW thickness was decreased from 2.4 to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.

Název v anglickém jazyce

Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Popis výsledku anglicky

InGaN/GaN multiple QW structures were prepared by MOVPE and characterized by high resolution X-ray diffraction. We demonstrate structure suitability for scintillator application including a unique measurement of wavelength-resolved scintillation response under nanosecond pulse soft X-ray source. The photo-, radio- and cathodo-luminescence were measured. We observed double peak luminescence governed by different recombination mechanisms: exciton in QW and related to defects. We have shown that for obtaining fast and intensive luminescence response proper structure design is required. The radioluminescence decay time of QW exciton maximum decreased from 16 ns to 4 ns when the QW thickness was decreased from 2.4 to 2 nm. We have proved suitability of InGaN/GaN structures for fast scintillator application for electron or other particle radiation detection. For x-ray detection the fast scintillation response would be hard to achieve due to the dominant slow defect luminescence maximum.

Druh

D - Stať ve sborníku

CEP obor

—

OECD FORD obor

10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Projekt

Výsledek vznikl pri realizaci vícero projektů. Více informací v záložce Projekty.

Návaznosti

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Rok uplatnění

2017

Kód důvěrnosti údajů

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Název statě ve sborníku

Fourth Conference on Sensors, MEMS, and Electro-Optic Systems

ISBN

978-151060513-8

ISSN

0277-786X

e-ISSN

—

Počet stran výsledku

4

Strana od-do

—

Název nakladatele

SPIE

Místo vydání

Bellingham

Místo konání akce

Skukuza

Datum konání akce

18. 9. 2016

Typ akce podle státní příslušnosti

WRD - Celosvětová akce

Kód UT WoS článku

000394537200042